Contents
Russian Microelectronics

Vol. 37, No. 3, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Materials Characterization

Depth Profiles of Refractive Index in Thermally Grown and LPCVD Oxide Films on Silicon

B. M. Ayupov, S. F. Devyatova, V. G. Erkov, and L. A. Semenova p. 141  abstract

Electron-Beam-Induced Modification of PbSnTe Surface Morphology
under HEED Monitoring of MBE Growth

L. A. Borynyak, A. A. Velichko, V. A. Ilyushin, D. I. Ostertak,
Yu. G. Peisakhovich, and N. I. Filimonova p. 146  abstract

Response of the Electron Plasma in a Thin Metal Slab to a Low-Frequency External Electric Field

A. V. Latyshev and A. A. Yushkanov p. 157  abstract

Solid-State Devices

New CMOS Process Using a Thermal-Oxide Mask for Making n^–- and p^–-Wells

Yu. P. Snitovsky and M. G. Krasikov p. 166  abstract

Micro- and Nanofabrication Technologies

Submicrometer- and Nanometer-Structure Formation on the Surface of Epitaxial IV–VI Semiconductor
Films by Ar-Plasma Treatment

S. P. Zimin, E. S. Gorlachev, I. I. Amirov, and M. N. Gerke p. 175  abstract

Improved Multistep Method of Ion Implantation into Silicon for IC Manufacture

V. I. Plebanovich, A. R. Chelyadinskii, Yu. B. Vasil’ev, A. I. Gladchuk, and V. E. Osipov p. 187  abstract

IC Reliability

IC Performance Degradation: Simulation and Forecasting

A. V. Strogonov p. 192  abstract

Circuits and Systems

New Experiments on Iterative Synthesis of Combinational Circuits

P. N. Bibilo and V. I. Romanov p. 201  abstract

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