Contents
Russian Microelectronics

Vol. 36, No. 3, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Process Technologies

C–V and I–V Characteristics of Ultrathin-Oxide MOS Structures: Identification and Analysis

A. G. Zhdan, G. V. Chucheva, and V. G. Naryshkina p. 139  abstract

Microelectronic Devices

Submicrometer Josephson Junction as a Sensor of Current States
in a Mesoscopic Superconducting Structure

I. N. Zhilyaev p. 148  abstract

Thin Films

Effect of Doping on the Temperature Coefficient of Resistance of Polysilicon Films

A. A. Kovalevskii, A. V. Dolbik, and S. N. Voitekh p. 153  abstract

Phosphomolybdic Acid-Assisted Thermal Oxidation of GaAs

I. Ya. Mittova, S. S. Lavrushina, E. V. Lebedeva, and A. V. Popelo p. 159  abstract

Polymer Surface Deformation under Semicontact-Mode AFM Scanning

A. B. Petrov and R. R. Gallyamov p. 164  abstract

Diffusion in Silicon

Transformation of a Gaussian Doping Profile in a Temperature Field as Influenced
by the Temperature Dependence of the Diffusion Coefficient

V. V. Ovcharov and V. I. Rudakov p. 171  abstract

Plasma Diagnostics

Plasma Etching of poly-Si/SiO₂/Si Structures: Langmuir-Probe
and Optical-Emission-Spectroscopy Monitoring

K. V. Rudenko, A. V. Myakon’kikh, and A. A. Orlikovsky p. 179  abstract

Modeling and Simulation

Simulating Quantum Dynamics in Terms of Classical Collective Behavior

Y. I. Ozhigov p. 193  abstract

Quantum Computing

Zn–P Complex in Si: An Ab-Initio Calculation of the Structure
and Electron-Spin Properties

A. I. Aleksandrov, S. N. Dobryakov,^†and V. V. Privezentsev p. 203  abstract

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