Contents
Russian Microelectronics

Vol. 35, No. 3, 2006

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Foreword to the Special Issue on Ionizing-Radiation Effects in Microelectronics p. 137

Radiation-Effect Modeling and Simulation
in Silicon Microelectronics

Physical Principles of Laser Simulation for the Transient Radiation
Response of Semiconductor Structures, Active Circuit Elements,
and Circuits: A Nonlinear Model

A. Y. Nikiforov and P. K. Skorobogatov p. 138  abstract

Estimating the IC Upset/Failure Threshold of Dose Rate for a Radiation Pulse Sequence

A. I. Chumakov and V. V. Gontar’ p. 150  abstract

Modeling Rail-Span Collapse in ICs Exposed to a Single Radiation Pulse

A. I. Chumakov p. 156  abstract

Dominant Mechanisms of Transient-Radiation Upset
in CMOS RAM VLSI Circuits Realized in SOS Technology

A. V. Kirgizova, A. Y. Nikiforov, N. G. Grigor’ev,
I. V. Poljakov, and P. K. Skorobogatov p. 162  abstract

Modeling and Simulation of the Enhanced Low-Dose-Rate
Sensitivity of Thick Isolating Layers in Advanced ICs

G. I. Zebrev p. 177  abstract

Modeling Neutron Ionization Effects on High-Density CMOS Circuit Elements

G. I. Zebrev p. 185  abstract

Complementary-Transistor Wideband Path for the Compensation
of Analog ICs Designed to Operate under Pulsed Ionizing Irradiation

T. M. Agakhanyan p. 197  abstract

Ensuring Radiation Hardness

Enhancing the Performance of Radiation-Hardened Embedded Computer Systems

V. M. Antimirov p. 200  abstract

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