Contents
Russian Microelectronics

Vol. 34, No. 3, 2005

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Process Technologies

Residual-Photoresist Removal from Si and GaAs Surfaces
by Atomic-Hydrogen Flow Treatment

E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev, K. V. Oskomov,
D. I. Proskurovski, and S. V. Romanenko p. 131  abstract

Thin Films

Electrical Behavior of In Situ Doped Polysilicon Films
as Influenced by the Dopants

A. A. Kovalevskii, V. E. Borisenko, V. M. Borisevich, and A. V. Dolbik p. 140  abstract

Making Anodic Alumina Thin Films Having a Pore Array

A. I. Vorobyova and E. A. Outkina p. 147  abstract

Micro- and Nanoelectronic Devices

Adjusting the Spectral Response of Silicon Photodiodes
by Additional Dopant Implantation

I. V. Vanyushin, V. A. Gergel’, V. A. Zimoglyad, and Yu. I. Tishin p. 155  abstract

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

R. D. Tikhonov p. 160  abstract

Microelectromechanical Systems

Square-Membrane Deflection and Stress: Identifying the Validity Range
of a Calculation Procedure

V. A. Gridchin, V. V. Grichenko, and V. M. Lubimsky p. 173  abstract

Silicon-Defect Spectroscopy

Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

V. I. Grafutin, O. V. Ilyukhina, G. G. Myasishcheva, V. V. Kalugin,
E. P. Prokopiev, S. P. Timoshenkov, N. O. Khmelevskii, and Yu. V. Funtikov p. 181  abstract

Circuit Analysis and Synthesis

Transient Analysis of Subnanosecond Integrated ADCs

A. Marcinkevicius, D. Poviliauskas, and V. Jasonis p. 187  abstract

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