Contents
Russian Microelectronics
Vol. 31, No. 3, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Power Transistors
Power Microwave FETs Using Epitaxial AlGaAs/GaAs Structures
A. K. Bakarov, K. S. Zhuravlev, A. I. Toropov, T. S. Shamirzaev,
Yu. B. Myakishev, and Yu. N. Rakov p. 137 abstract
Circuit Engineering
New All-nMOS Quasi-adiabatic Dynamic Logic
V. V. Losev and V. I. Staroselskii p. 143 abstract
Logic Synthesis of Series-MOSFET Programmable Arrays
P. N. Bibilo p. 149 abstract
Logic-Programming Approach to CMOS Design: Describing GateSwitch Networks in Predicates
A. E. Lyulkin p. 162 abstract
Process Technologies
New VLSI Multilevel Metallization Technology Using Polyimide Insulation
S. F. Senko and Yu. P. Snitovskii p. 170 abstract
Dry Etching of Copper Using Chlorine: A Review
A. M. Efremov and V. I. Svettsov p. 179 abstract
Thin Films
ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment
A. N. Gruzintsev, V. T. Volkov, and L. N. Matveeva p. 193 abstract
Luminescent Properties of ZnO Films Doped with Group-IB Acceptors
A. N. Gruzintsev, V. T. Volkov, I. I. Khodos, T. V. Nikiforova, and M. N. Kovalchuk p. 200 abstract
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