Contents
Russian Microelectronics

Vol. 31, No. 3, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Power Transistors

Power Microwave FETs Using Epitaxial AlGaAs/GaAs Structures

A. K. Bakarov, K. S. Zhuravlev, A. I. Toropov, T. S. Shamirzaev,
Yu. B. Myakishev, and Yu. N. Rakov p. 137  abstract

Circuit Engineering

New All-nMOS Quasi-adiabatic Dynamic Logic

V. V. Losev and V. I. Starosel’skii p. 143  abstract

Logic Synthesis of Series-MOSFET Programmable Arrays

P. N. Bibilo p. 149  abstract

Logic-Programming Approach to CMOS Design: Describing Gate–Switch Networks in Predicates

A. E. Lyul’kin p. 162  abstract

Process Technologies

New VLSI Multilevel Metallization Technology Using Polyimide Insulation

S. F. Sen’ko and Yu. P. Snitovskii p. 170  abstract

Dry Etching of Copper Using Chlorine: A Review

A. M. Efremov and V. I. Svettsov p. 179  abstract

Thin Films

ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment

A. N. Gruzintsev, V. T. Volkov, and L. N. Matveeva p. 193  abstract

Luminescent Properties of ZnO Films Doped with Group-IB Acceptors

A. N. Gruzintsev, V. T. Volkov, I. I. Khodos, T. V. Nikiforova, and M. N. Koval’chuk p. 200  abstract

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