Contents
Russian Microelectronics

Vol. 30, No. 3, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Prospects. Part II

A. A. Orlikovskii, K. V. Rudenko, and Ya. N. Sukhanov p. 137  abstract

A Microwave High-Density Plasma Source for Submicron Silicon IC Technology

S. N. Averkin, K. A. Valiev, V. A. Naumov, A. V. Kalinin, A. D. Krivospitskii,
A. A. Orlikovskii, and A. A. Rylov p. 155  abstract

Microwave Plasmatrons for Fabrication of High-Density Integrated Circuits

A. B. Petrin p. 160  abstract

Superlarge Defects in CZ Si : B Single Crystals

V. A. Yur’ev and V. P. Kalinushkin p. 173  abstract

Electron Microscopy Study of Ferroelectric Memory Based
on Si–SiO₂–Ti–Pt–PZT Multilayer Structure

O. M. Zhigalina, P. V. Burmistrova, A. L. Vasil’ev, V. V. Roddatis,
K. A. Vorotilov, and A. S. Sigov p. 175  abstract

Investigation of the Metal Deposited into Nanopores of Anodic Alumina
upon Fabricating Substrates for Microelectronic Devices

N. I. Mukhurov, I. F. Kotova, I. V. Gasenkova, A. V. Galdetskii, and V. A. Chubarenko p. 187  abstract

Silicon Surface Cleaning by Wet Etching for IC Production
in a Closed Manufacturing System

Yu. P. Snitovskii p. 191  abstract

A Microstrip Thin-Film Low-Field Magnetic Transducer

B. A. Belyaev, S. V. Butakov, and A. A. Leksikov p. 195  abstract

Specific Features of the Current–Voltage Characteristics of p–n Structures
with an Interfacial Layer in the Base Region

B. S. Sokolovskii p. 203  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.