Vol. 47, No. 3, 2018

Russian Microelectronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes

A. V. Miakonkikh, N. A. Orlikovskiy, A. E. Rogozhin, A. A. Tatarintsev and K. V. Rudenko p. 157 abstract

Helium Bubbles Formed in Si(001) Layers after High-Dose Implantation and Thermal Annealing

A. A. Lomov, A. V. Myakonkikh and Yu. M. Chesnokov p. 165 abstract

Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions

A. I. Chumakov p. 175 abstract

Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure

I. V. Malikov, V. A. Berezin, L. A. Fomin and G. M. Mikhailov p. 181 abstract

Magnetic Force Microscopy of Iron and Nickel Nanowires Fabricated by the Matrix Synthesis Technique

D. A. Bizyaev, A. A. Bukharaev, R. I. Khaibullin, N. M. Lyadov, D. L. Zagorskii, S. A. Bedin and I. M. Doludenko p. 187 abstract

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

A. S. Benediktov, N. A. Shelepin, P. V. Ignatov, A. A. Mikhailov and A. G. Potupchik p. 197 abstract

Calculating the High-Frequency Electrical Conductivity of a Thin Metallic Layer for an Ellipsoidal Fermi Surface

I. A. Kuznetsova, D. N. Romanov and A. A. Yushkanov p. 201 abstract

Finite Element Simulation of Frequency Response of MEMS-Microphone

D. M. Grigor’ev, I. V. Godovitsyn, V. V. Amelichev and S. S. Generalov p. 211 abstract

Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures

A. S. Benediktov, N. A. Shelepin and P. V. Ignatov p. 217 abstract

Contents

Russian Microelectronics