Vol. 45, No. 3, 2016

Russian Microelectronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Nanoelectromechanical Diamond Structures in Quantum Informatics. Part II

A. V. Tsukanov p. 153 abstract

Modeling of the High Aspect Groove Etching in Si in a Cl₂/Ar Mixture Plasma

A. S. Shumilov, I. I. Amirov and V. F. Lukichev p. 167 abstract

Mathematical Model of Thin-Film Electrode Polarization

I. A. Kuznetsova, A. N. Kulikov, T. L. Kulova, A. V. Metlitskaya, A. A. Mironenko, A. S. Rudyi and A. M. Skundin p. 180 abstract

Investigation of the Impact of Plasma Etching Steps on the Roughness of the Fin FET Channel Sidewalls in the Scheme of Hetero-Integration

G. V. Baranov, A. P. Milenin and M. P. Baklanov p. 186 abstract

Formation of Silver and Zinc Selenide Relief Patterns by the Lift-Off Photolithography Method

D. V. Lysich, S. V. Zelentsov, V. E. Kotomina and I. N. Antonov p. 191 abstract

A Nonlinear Microwave Model of a Low-Barrier Diode Based on Semiconductor Junctions

I. V. Yunusov, V. A. Kagadei, A. Yu. Fazleeva and V. S. Arykov p. 196 abstract

Detection of Terahertz Radiation by Resonant Tunneling Nanoheterostructures

V. I. Egorkin and V. V. Kapaev p. 205 abstract

Non-Stationary Phase Transitions in Systems Metallization of Silicon Structures

A. A. Skvortsov, S. M. Zuev and M. V. Koryachko p. 215 abstract

Analysis of the Technological Characteristics in Fabricating SOI MEMS Transducers

N. M. Parfenov p. 223 abstract

Contents

Russian Microelectronics