Contents
Russian Microelectronics

Vol. 43, No. 3, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Dots in Photonic Molecules and Quantum Informatics
Part II.

A. V. Tsukanov p. 165  abstract

Influence of the Generation and Recombination of Carriers on the Volt-Ampere
Characteristics of Semiconductor Heterostructures

V. S. Kuznetsov, P. A. Kuznetsov, and A. S. Rudyi p. 181  abstract

Evaluation of the Effective Threshold Energy of the Interband Impact Ionization
in a Deep-Submicron Silicon n-Channel MOS Transistor

V. M. Borzdov, A. V. Borzdov, D. S. Speransky, V. V. V’yurkov, and A. A. Orlikovsky p. 189  abstract

Ion Implantation of Positive Photoresists

D. I. Brinkevich, S. D. Brinkevich, N. V. Vabishchevich,
V. B. Odzhaev, and V. S. Prosolovich p. 194  abstract

Measuring Temperature of Silicon Monocrystals Using Spectral Pyrometry

A. N. Magunov, A. O. Zakharov, and B. A. Lapshinov p. 201  abstract

Change in Magnetic Properties of Two-Dimensional Magnetic Photonic Crystals
Using a Light Stimulus

D. E. Afanas’eva, N. Yu. Zvezdin, V. A. Paporkov, and A. V. Prokaznikov p. 207  abstract

Regularities of the Formation of Fractal Porous Clusters in Silicon

N. A. Arzhanova, A. V. Mozhaev, and A. V. Prokaznikov p. 212  abstract

Methods of Calibration and Correction of Analog-to-Digital Converters (Review)

A. S. Korotkov p.226 abstract

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