Contents
Russian Microelectronics

Vol. 42, No. 3, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Memory Based on Ensemble States of NV Centers in Diamond

A. V. Tsukanov p. 127  abstract

Quantum Error Correction in Silicon Charge Qubits

A. A. Melnikov and L. E. Fedichkin p. 148  abstract

Test Object for Calibrating the Transmission Electron Microscope

A. L. Vasil’ev, V. P. Gavrilenko, M. V. Koval’chuk, V. B. Mityukhlyaev, Yu. V. Ozerin,
A. V. Rakov, V. V. Roddatis, P. A. Todua, and M. N. Filippov p. 155  abstract

Field-Effect Transistor with Nanowire Channel Based on Heterogeneously Doped SOI

S. V. Amitonov, D. E. Presnov, V. I. Rudakov, and V. A. Krupenin p. 160  abstract

Chemically Amplified Resists for High-Resolution Lithography

S. A. Bulgakova, M. M. Jons, A. E. Pestov, M. N. Toropov, N. I. Chkhalo, S. A. Gusev,
E. V. Skorokhodov, and N. N. Salashchenko p. 165  abstract

Micromagnetic Software Package MICROMAG and Its Applications to Study Elements of Spintronics

O. S. Trushin and N. Barabanova p. 176  abstract

Calculation of the Flow Capacity of a Gas Channel in the Sources of Beams
of Fast Neutral Particles by Means of the Monte-Carlo Method

V. P. Kudrya and Yu. P. Maishev p. 184  abstract

An Iteration Algorithm of Coding Internal States of Finite-State Machines for Minimizing
the Power Consumption

V. V. Solov’ev and T. N. Grzes p.189  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.