Contents
Russian Microelectronics

Vol. 41, No. 3, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

NV-Centers in Diamond. Part II. Spectroscopy, Spin-State Identification, and Quantum Manipulation

A. V. Tsukanov p. 145  abstract

Formation of a Submicron GaAs MESFET Gate Using a Four-Layer Dielectric Dummy Gate

V. S. Arykov, A. M. Gavrilova, O. A. Dedkova, V. A. Kagadei, and Yu. V. Lilenko p. 162  abstract

Silicon Solar Cells with Si–Ge Microheterojunctions

B. A. Abdurakhmanov, Kh. M. Iliev, S. A. Tachilin, and A. R. Toshev p. 169  abstract

Current–Voltage Characteristic and the Spectrum Width of Electrons Tunneling
through W–WO₂–()–Al₂O₃–Al and Nd–Nd₂O₃–()–Nd₂O₃–Nd Nanosandwiches.
Part II: Construction and Analysis of 1D Models for 3D Nanosandwiches

V. A. Zhukov and V. G. Maslov p. 172  abstract

Features of the Formation of a Low-Resistance Ge/Au/Ni/Ti/Au Ohmic Contact to n-i-GaAs

E. V. Erofeev and V. A. Kagadei p. 181  abstract

Production of Ti, La, Pb, Cd, Mn, Zr, and Y Oxide Thin Films on Complex Surfaces
of Etched Aluminum Foils for Electrolytic Capacitors by the Pyrolysis Method of Salts of Organic Acids

A. A. Myatiev, I. S. Krechetov, and P. A. Petrenko p. 189  abstract

Nonempirical Simulation of Chemical Deposition of Silicon Nitride Films in CVD Reactors

T. M. Makhviladze, A. Kh. Minushev, and M. E. Sarychev p. 196  abstract

Semiclassical Simulation of the Diffraction of a Material Wave from Two Coulomb Centers

K. S. Arakelov p. 206  abstract

Optimization of the Design Flow of the System on a K64-RIO Crystal Manufactured Using
the 0.18 m Technology

A. O. Vlasov, B. E. Evlampiev, P. G. Kirichenko, and A. A. Kochnov p.213  abstract

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