Contents
Russian Microelectronics

Vol. 39, No. 3, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Device and Process Modeling and Simulation

Nano- and Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation
and Metallization Lifetime Prediction, Part 2: Polycrystalline-Line Degradation and Bulk Failure

K. A. Valiev, R. V. Goldstein, Yu. V. Zhitnikov, T. M. Makhviladze, and M. E. Sarychev p. 145  abstract

Mathematical Simulation of the Processes of Generation of “Shock Waves”
in a Two-Dimensional Electron Gas in the Channel of a Ballistic Field-Effect Transistor

I. A. Semenikhin and E. A. Vostrikova p. 158  abstract

Dynamics of Technological Processes

Synthesis and Investigation of New Materials in MIS Structures for the Development
of Physical Foundations of CMOS Technologies of Nanoelectronics

A. V. Zenkevich, Yu. Yu. Lebedinskii, Yu. A. Matveev, N. S. Barantsev, Yu. A. Voronov,
A. V. Sogoyan, V. N. Nevolin, V. I. Chichkov, S. Spiga, and M. Fanchulli p. 165  abstract

Effect of Broadening the Discrete Levels of the Granule on the Character
of the Current–Voltage Characteristic of a Single-Electron Diode

A. V. Babich, V. V. Pogosov, A. M. Baginskii, N. N. Nagornaya, and A. G. Kravtsova p. 175  abstract

Chemical Nanotechnology of Oxide and Nitride Low-Dimensional Structures
on a Semiconductor Matrix

Yu. K. Ezhovskii p. 182  abstract

Thin Films

Self-Organization of Germanium Highly Ordered Nanoclusters by the Deposition
of Polycrystalline Silicon Films Doped with Germanium

A. A. Kovalevskii, N. V. Babushkina, D. V. Plyakin, and A. C. Strogova p. 190  abstract

Low Temperature Pulsed Gas-Phase Deposition of Thin Layers of Metallic Ruthenium
for Micro- and Nanoelectronics: Part 2. Kinetics of the Growth of Ruthenium Layers

V. Yu. Vasilyev p. 199  abstract

Circuit Analysis and Synthesis

Delta–Sigma Modulator with a 50-MHz Sampling Rate Implemented in 0.18-m CMOS Technology

A. S. Korotkov, M. M. Pilipko, D. V. Morozov, and J. Hauer p.210  abstract

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