Contents
Russian Microelectronics

Vol. 29, No. 3, 2000

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Implantation of Low-Energy Boron Ions into Silicon
from a Low-Temperature High-Density Ar + BF₃ Plasma

I. I. Amirov, S. A. Krivelevich, S. G. Simakin, O. V. Morozov, and A. A. Orlikovskii p. 147  abstract

SiO₂ Film Deposition in a Low-Pressure RF Inductive Discharge SiH₄ + O₂ Plasma

O. V. Morozov and I. I. Amirov p. 153  abstract

Nanometer-Thick Oxide Films Produced by Electrochemical Anodizing of Silicon

V. M. Mordvintsev and N. L. Murav’eva p. 159  abstract

Ti/TiO_x Single-Electron Devices Produced with a Step-Edge-Cut-off (SECO) Method

L. V. Litvin, V. A. Kolosanov, K. P. Mogil’nikov, A. G. Cherkov, D. G. Baksheev,
V. A. Tkachenko, and A. L. Aseev p. 170  abstract

A Two-Dimensional Numerical Model of a Single-Electron Transistor

I. I. Abramov and E. G. Novik p. 177  abstract

Stable Near-Breakdown Avalanche Electroluminescence
from Variously Shaped Microstructures

A. N. Gruzintsev p. 181  abstract

A Mechanism of Hysteresis in Brightness–Voltage Characteristics
of ZnS : Mn-Based Light-Emitting MISIM Structures

Ya. I. Alivov and A. N. Gruzintsev p. 189  abstract

Testing AND–EXOR Programmable Logic Arrays

A. E. Lyul’kin p. 194  abstract

Simulation of Implant Distribution with the Inverse Fokker–Planck Equation

I. E. Mozolevskii p. 200  abstract

Simulation of Oxygen Precipitation in Silicon

S. V. Bulyarskii, V. V. Svetukhin, and O. V. Prikhod’ko p. 207  abstract

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