Contents
Russian Microelectronics

Vol. 38, No. 2, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Physics and Technology of MOS Transistors and CMOS Structures

The Use of Stressed Silicon in MOS Transistors and CMOS Structures

I. G. Neizvestnyi and V. A. Gridchin p. 71  abstract

Electrical Properties of InAs–SiO₂–In₂O₃ MIS Structures with a Modified Interface

N. A. Valisheva, A. A. Guzev, A. P. Kovchavtsev, G. L. Kuryshev, T. A. Levtsova, and Z. V. Panova p. 87  abstract

Dynamics of Technological Processes and Equipment

Emission Tomography of Plasma in Technological Reactors of Microelectronics

A. V. Fadeev, K. V. Rudenko, V. F. Lukichev, and A. A. Orlikovskii p. 95  abstract

Clean Boxes with Artificial Climate for Atomic Force Microscopy: New Possibilities for Diagnostics
of Nanodimensional Objects

A. L. Tolstikhina, R. V. Gainutdinov, M. L. Zanaveskin, K. L. Sorokina, N. V. Belugina,
Yu. V. Grishchenko, and V. D. Shestakov p. 110  abstract

Thin Films

Ge-Nanocluster Formation in Ge-Doped Polysilicon Films under Oxidation and Heat Treatment

A. A. Kovalevsky, A. S. Strogova, and D. V. Plyakin p. 118  abstract

Samarium-Atom Adsorption and Desorption on Iridium

A. K. Orudzhov, A. O. Dashdemirov, and A. K. Elchieva p. 130  abstract

Quantum-Computing Devices

Nonholonomic Control in Quantum Computers Based on Ions in a Trap

A. S. Burkov p. 134  abstract

Circuit Analysis and Synthesis

Influence of Noise Parameters of Integral Operational Amplifiers and Voltage Comparators
and Their Nonlinear Distortions on Presentation Accuracy of Signals Being Processed

T. M. Agakhanyan p. 140  abstract

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