Contents
Russian Microelectronics

Vol. 26, No. 2, 1997

Simultaneous English language translation of the journal is available from / Interperiodica Publishing (Russia).
Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 1063-7397.

Foreword p. 65

Vacuum Microelectronics

Nanofilament Carbon Structures: A New Material for Emission Electronics

Yu. V. Gulyaev, N. I. Sinitsyn, G. V. Torgashov, L. A. Chernozatonskii,
Z. Ya. Kosakovskaya, and Yu. F. Zakharchenko p. 66 abstract

Properties of Nanometer Field Emitters

G. N. Fursei, D. V. Glazanov, L. M. Baskin, A. O. Evgen’ev, A. V. Kocheryzhenkov, and S. A. Polezhaev p. 71 abstract

Electron and Ion Point Sources Based on Thermofield Formations

V. N. Shrednik p. 78 abstract

Diamond-coated Silicon Tips as Field Emitters

E. I. Givargizov p. 82 abstract

Emission Characteristics of Field-Emission Cathodes Based on Silicon Whiskers

V. V. Zhirnov and A. V. Kandidov p. 87 abstract

On Estimating the Equivalent Temperature of Schottky Noise in Semiconductor Cold Emitters

R. Z. Bakhtizin and S. S. Gots p. 92 abstract

Field Emission from Semiconductors

G. N. Fursei and L. M. Baskin p. 96 abstract

Vacuum Microwave Microlectronic Devices with a Finite Transit Angle

A. V. Galdetskii p. 102 abstract

A Distributed Microwave Amplifier Based on Field-Emitter Arrays
with a Periodically Nonuniform Energy Collector

Yu. V. Gulyaev, Yu. F. Zakharchenko, A. I. Zhbanov, I. S. Nefedov, and N. I. Sinitsyn p. 108 abstract

Simulation of Lateral Grain Growth at Excimer-Laser Crystallization of Amorphous Silicon Films

A. B. Limanov p. 113 abstract

Diffusion Processes in a Thin-Film Si–Mo–Al System

A. M. Orlov, B. M. Kostishko, and A. A. Skvortsov p. 119 abstract

Formation of Conformal Silicon Dioxide Films in a Microwave Vacuum Plasma
Excited by Electron Cyclotron Resonance

V. A. Oleinik and R. K. Yafarov p. 123 abstract

Iddq Testing of Iterative CMOS Logic Ics

V. N. Yarmolik, A. I. Yanushkevich, and M. G. Karpovski p. 127 abstract

Electrophysical Parameters of CMOS Transistors Based on a Si/CaF₂/Si Epitaxial Structure

A. A. Velichko and B. B. Kol’tsov p. 131 abstract

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