Contents
Russian Microelectronics

Vol. 25, No. 2, 1996

Simultaneous English language translation of the journal is available from / Interperiodica Publishing (Russia).
Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 0363-8529.

Digital Time–Impulse Autowave Neural Networks and Their Microelectronic Implementation

Yu. I. Balkarei, M. I. Elinson, M. G. Evtikhov, A. S. Kogan, and Yu. N. Orlov p. 73  abstract

Optical Temperature Measurements of Semiconductor Crystals in the 300–800 K Range: An Overview

A. N. Magunov and O. V. Lukin p. 87 abstract

Integrated Circuits with Single-Layer Topology

V. V. Rakitin p. 101 abstract

Determination of Pseudorandom Test Length for Combinational Logic
of VLSI Circuits on the Basis of Structural Definitions

A. I. Korobkov, A. E. Stepanyuk, and I. I. Shagurin p. 105 abstract

Use of a Thermodynamic Parameter
for Quality Control of Microelectronic Devices

N. N. Nomokonova p. 111 abstract

Electrical Breakdowns of MOS Structures:
A Primary Cause of Chip Degradation in Plasma

V. A. Ryabyi, V. P. Savinov, A. A. Sporykhin, and V. G. Yakunin p. 115 abstract

A Linear Photoelectric Former of Coded Signals

V. A. Arutyunov, N. G. Bogatyrenko, A. S. Gribov, and O. V. Sorokin p. 122 abstract

On Testing of CMOS Logical Circuits

A. E. Lyul’kin p. 126 abstract

The Effect of Reactive Ion Etching on the Porosity and Charge of Silicon Dioxide Films

E. Yu. Zamalin and G. N. Gridneva p. 129 abstract

Express Method for Characterization of GaAs MESFETs

V. I. Starosel’skii p. 132 abstract

The Influence of Switching Voltage on the Properties
of Memory Elements Based on Formed MIM Structures

P. E. Troyan p. 136 abstract

Thermal Oxidation in the Technology of GaAs Integrated Circuits

I. A. Akhin’ko, A.T. Grigor’ev, E. Ya. Gol’dberg, E. A. Il’ichev,
V. N. Inkin, T. L. Lipshits, A. P. Lotsman, and I. G. Orlova p. 138 abstract

Electrodiffusive Instability of Microprotrusions
on a Conducting Surface

D. V. Eremchenko and V. A. Fedirko p. 143 abstract

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