Contents
Russian Microelectronics

Vol. 37, No. 2, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

IC Characterization

Diluted Magnetic Semiconductors: Actual Structure and Magnetic and Transport Properties

M. A. Chuev, B. A. Aronzon, E. M. Pashaev, M. V. Koval’chuk, I. A. Subbotin, V. V. Rylkov,
V. V. Kvardakov, P. G. Medvedev, B. N. Zvonkov, and O. V. Vikhrova p. 73  abstract

Materials Characterization

Microwave Method for SOS Quality Testing

P. A. Borodovskii, A. F. Buldygin, N. I. Peturov, S. N. Rechkunov, and V. A. Samoilov p. 89  abstract

Achieving Sub-1.6-nm Resolutions of a Low-Voltage Microscopic Focused-Ion-Beam System Not Involving
Aberration Correction

V. A. Zhukov p. 98  abstract

Micro- and Nanofabrication Technologies

Flip-Chip Bump-Lead Fabrication: A Review

V. V. Zenin, E. P. Novokreshchenova, and O. V. Khishko p. 107  abstract

Solid-State Devices and Circuits

Silicon Readout ICs for Third-Generation 2D IR Focal-Plane Arrays Operating
over the Wavelength Range 8–12 m

I. I. Lee p. 114  abstract

Hardness Assurance: Methods and Results

Radiation Effects in a BiCMOS LSI Interface Transceiver

A. I. Belous, Yu. V. Bogatyrev, F. P. Korshunov, A. S. Artamonov, and S. V. Shvedov p. 121  abstract

Circuits and Systems

New Approach to the Mathematical Modeling of Thermal Regimes for Electronic Equipment

G. V. Kuznetsov and M. A. Sheremet p. 131  abstract

Information for Authors p. 139

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