Contents
Russian Microelectronics

Vol. 35, No. 2, 2006

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Micro- and Nanoelectronic Devices

Electrical Behavior of Modulation- and Delta-Doped
Al_xGa_1 – xAs/In_yGa_1 – yAs/GaAs PHEMT Structures

G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, and V. G. Mokerov p. 67  abstract

Cold Atoms in Optical Lattices as Qubits for a Quantum Computer

D. B. Tretyakov, I. I. Beterov, V. M. Entin, and I. I. Ryabtsev p. 74  abstract

Materials and Microstructure Characterization

Electroluminescence Mechanisms in SiO_xN_y(Si) Nanocomposite Films

V. G. Baru, V. A. Zhitov, L. Yu. Zakharov,
A. N. Izotov, V. I. Pokalyakin, G. V. Stepanov^†,
O. F. Shevchenko, and E. A. Shteinman p. 78  abstract

Progression of an Excess-Carrier Pulse in Zn-Compensated P-Doped Si Exposed
to an Electric Field Close to the Recombination-Wave Threshold

B. V. Kornilov and V. V. Privezentsev p. 87  abstract

Influence of Background Impurities on the Formation
of Stacking Faults in Silicon Wafers

D. I. Brinkevich, V. S. Prosolovich, S. A. Vabishchevich, and A. N. Petlitskii p. 94  abstract

Multiplex Fourier-Transform Spectroscopy in the Characterization of Stochastic
Inhomogeneous Film Growth: A Conceptual Framework

V. A. Kotenev p. 98  abstract

Process Technologies

Reading Sensitivity of a New Thermomechanical Data-Storage Technique:
The Effect of Reducing Probe Dimensions

A. B. Petrin p. 105  abstract

Circuit Analysis and Synthesis

Inclusion–Exclusion Principle in the Design of a BIST Unit for LSI and VLSI Circuits

I. P. Kobyak p. 116  abstract

Transient Analysis of RC On-Chip Transmission Lines with Respect to Propagation Speed

V. B. Fyodorov p. 127  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.