Contents
Russian Microelectronics

Vol. 34, No. 2, 2005

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

VLSI Technology

Borophosphosilicate Glass Films in Silicon Microelectronics,
Part 2: Structure and Applications

V. Y. Vasilev p. 67  abstract

Process Technologies

n-AlGaAs/GaAs/n-AlGaAs Double Quantum
Wells with an AlAs Barrier: Relating the Cladding Doping
Level to Structural and Transport Properties

I. S. Vasil’evskii, G. B. Galiev, G. V. Ganin, R. M. Imamov, E. A. Klimov,
A. A. Lomov, V. G. Mokerov, V. V. Saraikin, and M. A. Chuev p. 78  abstract

IPL Resistless Lithography as a Method for Delta-Doping
of Monocrystalline Semiconductors by Al and Sb Implantation

V. A. Zhukov p. 88  abstract

Materials and Microstructure Characterization

Diffraction Ellipsometric Measurement of Step Height on Wafer Surfaces

E. S. Gornev and E. S. Lonskii p. 95  abstract

Micro- and Nanoelectronic Devices

Theory of the Vacuum Nanotriode, Part 1: Explaining the Results of an Experiment

V. A. Zhukov p. 103  abstract

Circuit Analysis and Synthesis

Lifetime Prediction for Submicrometer LSI Circuits and Programmable Logic: An Overview

A. V. Strogonov p. 111  abstract

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