Contents
Russian Microelectronics

Vol. 33, No. 2, 2004

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Special Issue on Radiation Hardness Assurance in Microelectronics p. 63

Radiation-Effect Modeling
and Simulation in Silicon Microelectronics

Mathematical Modeling of Ionizing-Radiation Effects in ICs: A Review

T. M. Agakhanyan p. 64  abstract

Physical Principles of Laser Simulation for the Transient Radiation Response
of Semiconductor Structures, Active Circuit Elements,
and Circuits: A Linear Model

A. Y. Nikiforov and P. K. Skorobogatov p. 68  abstract

Modeling of High-Dose-Rate Pulsed Radiation Effects
in the Parasitic MOS Structures of CMOS LSI Circuits

A. Y. Nikiforov and A. V. Sogoyan p. 80  abstract

One-Parameter Model for the Estimation of IC Susceptibility
to Proton-Induced Single-Event Upsets

A. I. Chumakov p. 92  abstract

Predicting the Failure Threshold of Dose Rate for ICs Exposed
to Pulsed Ionizing Radiation of Arbitrary Pulse Shape

A. I. Chumakov and V. V. Gontar’ p. 99  abstract

Evaluation of Moderately Focused Laser Irradiation
as a Method for Simulating Single-Event Effects

A. I. Chumakov, A. N. Egorov, O. B. Mavritsky, and A. V. Yanenko p. 106  abstract

Radiation Effects on Advanced GaAs FETs

Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT:
A Comparison of Gamma- and X-ray Results

D. V. Gromov, V. V. Elesin, S. A. Polevich, Yu. F. Adamov, and V. G. Mokerov p. 111  abstract

Comparison between the Ion-Beam and the Laser Long-Range
Gettering of GaAs MESFETs

S. V. Obolenskii p. 116  abstract

Effect of Radiation-Induced Defect Clusters on Current Flow
through a Quasi-ballistic GaAs MESFET

S. V. Obolenskii p. 120  abstract

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