Contents
Russian Microelectronics

Vol. 32, No. 2, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Characterization

In_xGa_1–xAs Strained-Layer Quantum Well in a Pseudomorphic Heterostructure:
High-Resolution XRD Characterization for Different Quantum-Well Thicknesses

A. M. Afanas’ev, R. M. Imamov, A. A. Lomov, V. G. Mokerov, M. A. Chuev,
Yu. V. Fedorov, and Yu. V. Khabarov p. 63  abstract

Micro- and Nanodevices

High-Permittivity-Insulator EEPROM Cell Using Al₂O₃ or ZrO₂

V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, and A. L. Aseev p. 69  abstract

Planar Power MOSFETs for Smart Power CMOS Switches

M. A. Korolev and R. D. Tikhonov p. 75  abstract

Current–Voltage Characteristics of Two-Electrode Elements with Carbon Nanotubes

I. I. Bobrinetskii, V. K. Nevolin, V. I. Petrik, and Yu. A. Chaplygin p. 79  abstract

Impulse-Current Generation by the Bispin: Factors Determining the Peak Current

A. P. Lysenko p. 82  abstract

Process Technologies

Electrochemical Etching of a Niobium Film through
a Thin Nanomask Formed by AFM Tip-Induced Local Oxidation

A. N. Red’kin, L. V. Malyarevich, I. V. Malikov, and G. M. Mikhailov p. 88  abstract

Surface-Photovoltage Measurement
of Volume Electron Lifetime in p-Si Wafers

V. A. Skidanov, M. S. Baev, and N. A. Baikova p. 91  abstract

Temperature Dependence of Carrier Generation
at the Silicon–Lead-Borosilicate-Glass Interface

S. I. Vlasov, P. B. Parchinskii, and L. G. Ligai p. 95  abstract

Simulation

NANODEV: A Nanoelectronic-Device Simulation Software System

I. I. Abramov, I. A. Goncharenko, S. A. Ignatenko, A. V. Korolev,
E. G. Novik, and A. I. Rogachev p. 97  abstract

Prediction of Local and Global Ionization Effects on ICs:
The Synergy between Numerical and Physical Simulation

V. V. Belyakov, A. I. Chumakov, A. Y. Nikiforov, V. S. Pershenkov,
P. K. Skorobogatov, and A. V. Sogoyan p. 105  abstract

Multilevel-Injection Characterization of Positive-Charge
Generation and Relaxation in MOS Oxide

V. V. Andreev, V. G. Baryshev, G. G. Bondarenko, and A. A. Stolyarov p. 119  abstract

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