Contents
Russian Microelectronics
Vol. 32, No. 2, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Characterization
InxGa1xAs Strained-Layer Quantum Well in a Pseudomorphic Heterostructure:
High-Resolution XRD Characterization for Different Quantum-Well Thicknesses
A. M. Afanasev, R. M. Imamov, A. A. Lomov, V. G. Mokerov, M. A. Chuev,
Yu. V. Fedorov, and Yu. V. Khabarov p. 63 abstract
Micro- and Nanodevices
High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2
V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, and A. L. Aseev p. 69 abstract
Planar Power MOSFETs for Smart Power CMOS Switches
M. A. Korolev and R. D. Tikhonov p. 75 abstract
CurrentVoltage Characteristics of Two-Electrode Elements with Carbon Nanotubes
I. I. Bobrinetskii, V. K. Nevolin, V. I. Petrik, and Yu. A. Chaplygin p. 79 abstract
Impulse-Current Generation by the Bispin: Factors Determining the Peak Current
A. P. Lysenko p. 82 abstract
Process Technologies
Electrochemical Etching of a Niobium Film through
a Thin Nanomask Formed by AFM Tip-Induced Local Oxidation
A. N. Redkin, L. V. Malyarevich, I. V. Malikov, and G. M. Mikhailov p. 88 abstract
Surface-Photovoltage Measurement
of Volume Electron Lifetime in p-Si Wafers
V. A. Skidanov, M. S. Baev, and N. A. Baikova p. 91 abstract
Temperature Dependence of Carrier Generation
at the SiliconLead-Borosilicate-Glass Interface
S. I. Vlasov, P. B. Parchinskii, and L. G. Ligai p. 95 abstract
Simulation
NANODEV: A Nanoelectronic-Device Simulation Software System
I. I. Abramov, I. A. Goncharenko, S. A. Ignatenko, A. V. Korolev,
E. G. Novik, and A. I. Rogachev p. 97 abstract
Prediction of Local and Global Ionization Effects on ICs:
The Synergy between Numerical and Physical Simulation
V. V. Belyakov, A. I. Chumakov, A. Y. Nikiforov, V. S. Pershenkov,
P. K. Skorobogatov, and A. V. Sogoyan p. 105 abstract
Multilevel-Injection Characterization of Positive-Charge
Generation and Relaxation in MOS Oxide
V. V. Andreev, V. G. Baryshev, G. G. Bondarenko, and A. A. Stolyarov p. 119 abstract
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