Contents
Russian Microelectronics
Vol. 31, No. 2, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Personalia
In Celebration of the 70th Birthday of Igor G. Neizvestny p. 69 abstract
Process Technologies
Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size
I. G. Neizvestny, N. L. Shvarts, and Z. Sh. Yanovitskaya p. 70 abstract
Thermal Oxidation of InP Promoted by the Formation of N2O
I. Ya. Mittova, S. S. Lavrushina, E. V. Popova, A. A. Muratov, and V. M. Kashkarov p. 79 abstract
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures
I. Ya. Mittova, E. V. Tomina, A. S. Sukhochev, A. N. Prokin, and A. O. Vasyukevich p. 84 abstract
Porous-Silicon Formation in HFHNO3H2O Etchants
E. A. Starostina, V. V. Starkov, and A. F. Vyatkin p. 88 abstract
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field
V. I. Rudakov and V. V. Ovcharov p. 97 abstract
Process Monitoring
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy
A. A. Bukharaev, N. I. Nurgazizov, and A. V. Sugonyako p. 103 abstract
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures
V. V. Luchinin and M. F. Panov p. 110 abstract
Quantum-Computer Components
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field
A. L. Danilyuk and V. E. Borisenko p. 116 abstract
Semiconductor Devices
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure
D. A. Andreev and N. S. Grushko p. 122 abstract
Process Quality Control
Local Ellipsometric Inspection of Small Windows
E. S. Lonskii p. 126 abstract
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production
K. K. Doroshevich, V. N. Popov, and S. A. Strizhkov p. 130 abstract
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