Contents
Russian Microelectronics

Vol. 31, No. 2, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Personalia

In Celebration of the 70th Birthday of Igor G. Neizvestny p. 69  abstract

Process Technologies

Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size

I. G. Neizvestny, N. L. Shvarts, and Z. Sh. Yanovitskaya p. 70  abstract

Thermal Oxidation of InP Promoted by the Formation of N₂O

I. Ya. Mittova, S. S. Lavrushina, E. V. Popova, A. A. Muratov, and V. M. Kashkarov p. 79  abstract

Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures

I. Ya. Mittova, E. V. Tomina, A. S. Sukhochev, A. N. Prokin, and A. O. Vasyukevich p. 84  abstract

Porous-Silicon Formation in HF–HNO₃–H₂O Etchants

E. A. Starostina, V. V. Starkov, and A. F. Vyatkin p. 88  abstract

Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field

V. I. Rudakov and V. V. Ovcharov p. 97  abstract

Process Monitoring

Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy

A. A. Bukharaev, N. I. Nurgazizov, and A. V. Sugonyako p. 103  abstract

Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures

V. V. Luchinin and M. F. Panov p. 110  abstract

Quantum-Computer Components

Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field

A. L. Danilyuk and V. E. Borisenko p. 116  abstract

Semiconductor Devices

Double-Junction Schottky Diodes Using a Ti/Si/Al Structure

D. A. Andreev and N. S. Grushko p. 122  abstract

Process Quality Control

Local Ellipsometric Inspection of Small Windows

E. S. Lonskii p. 126  abstract

Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production

K. K. Doroshevich, V. N. Popov, and S. A. Strizhkov p. 130  abstract

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