Vol. 55, No. 2, 2026

Russian Microelectronics

DFT Modeling of Nitrogen Adsorption and Doping in A15-Type Intermetallic Ti₃Sb

M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva, S. Y. Aliyeva, and V. F. Lukichev p. 239 abstract

Electroplasticity of Metallic Nanowires for Ultrashort Current Loads

S. Sh. Rekhviashvili p. 252 abstract

Dephasing of a Charge Qubit in a Stochastic Field of Oscillating Electrons

N. V. Kulagin and A. V. Tsukanov p. 258 abstract

Modeling the Temperature Dependence of Photoconductivity of Sensitized Indium Phosphide with a Deep Copper Impurity

Ph. V. Makarenko, K. V. Zol’nikov, A. V. Achkasov, A. S. Yagodkin, N. Yu. Zalenskaya, and A. I. Zarevich p. 269 abstract

Flexible FePPc/MWCNT/Al Electrodes for Portable Energy Sources

A. A. Mitina, T. N. Rudneva, and E. E. Yakimov p. 280 abstract

Estimating the Stochastic Reliability of a KP961 Power Transistor under Thermal Cycling Using the Monte Carlo Simulation

T. I. Isabekova and A. R. Shakhmaeva p. 289 abstract

Electrochemical Capacitance of Porous Silicon, Carbon, and Manganese(IV) Oxide-Based Composites

D. M. Sedlovets, V. V. Starkov, and V. V. Ulyanova p. 304 abstract

Effect of the Ordering of Sulfur Vacancies on the Electronic Properties of Molibdenum Disulfide Monolayers

S. S. Bulakh, A. N. Chibisov, and A. Srivastava p. 311 abstract

Modeling the Interface Contribution to the Electrical Properties of Memristive Compositions with Thin Ferroelectric Films

E. A. Ryndin, N. V. Andreeva, and A. E. Petukhov p. 316 abstract

Ru-Based Interconnects for Memristor Crossbars

A. Rogozhin, O. Glaz, A. Reznyukov, and A. Melnikov p. 322 abstract

Research of the Influence of Rapid Thermal Annealing on the Properties of Thin Molybdenum Films

S. V. Petrova, O. I. Ilin, N. G. Gorbunov, A. Z. Shikov, and O. I. Soboleva p. 326 abstract

Optimization of Wireless Data Transmission in Three-Dimensional Integrated Circuits Using Nanophotonic Devices: Challenges and Solutions

D. A. Serov and I. A. Khorin p. 332 abstract

Optimization of the Electro-Optic Effect in InP Quantum Well Structures

A. D. Mustafin, K. S. Grishakov, and I. S. Vasil’evskii p. 340 abstract

Influence of LNOI Waveguide Geometry on the Properties of Generated Squeezed Light

A. A. Poshevkina and P. R. Sharapova p. 347 abstract

Predicting the Detection Capabilities for Weak Optical Signals in the 3–5 μm Spectral Range for Next-Generation HgTe Quantum Dot-Based Photodetectors

O. A. Saptsova, V. O. Yakovlev, A. A. Koronnov, T. V. Koroleva, K. T. Khakimov, V. P. Ponomarenko, and V. S. Popov p. 356 abstract

Control of the Nucleation and Growth Kinetics of Colloidal HgTe Quantum Dots by Varying the Method of Te and Hg Precursor Addition for IR Photosensors

T. V. Koroleva, K. T. Khakimov, O. A. Saptsova, V. O. Yakovlev, A. A. Koronnov, O. V. Vershinina, A. G. Medvedev, V. P. Ponomarenko, and V. S. Popov p. 362 abstract

Design of High-Performance Low-Power Adder Circuits, 2 to 4 Decoder and 2 × 1 Mux Using RLG for VLSI Applications

Syed Zahiruddin, P. Subbarayudu, P. V. S. Murali Krishna, A. Valli Bhasha, and P. Dileep Kumar Reddy p. 369 abstract

Compact Model for Uniaxial Strain-Induced Threshold Voltage Shift in High-k/Metal Gate Nanoscale Bulk MOSFETs

Yashu Swami p. 376 abstract

FinFET-Based SRAM Cell Using Low-Power Technique for Leakage and Stability Optimization

Ekta Jolly, Vijay Kumar Sharma, and Anil Kumar Bhardwaj p. 386 abstract

Design and Optimization of CMOS Two-Stage Operational Amplifier Using Hippopotamus Optimization Algorithm

Suvashish Kund, Bishnu Prasad De, Sandeep Kumar Dash, Bhargav Appasani, and Rajib Kar p. 396 abstract

Contents

Russian Microelectronics