Vol. 54, No. 2, 2025

Russian Microelectronics

Regularities of X-ray Transfer in Doped Multicomponent Semiconductors for Dosimetry

S. M. Asadov, S. N. Mustafaeva, and V. F. Lukichev p. 97 abstract

Precise Etching of Aluminum Conductors in the Technology of Switching Devices of Microsystem Engineering

P. I. Didyk, and A. A. Zhukov p. 115 abstract

Spectroscopy and Actinometry of Halogen-Containing Inductively Coupled Plasma for Anisotropic Etching

V. O. Kuzmenko p. 122 abstract

Multilevel Switching in Memristive Structures Based on Oxidized Lead Selenide

N. A. Tulina, A. N. Rossolenko, I. M. Shmyt’ko, I. Yu. Borisenko, D. N. Borisenko, and N. N. Kolesnikov p. 131 abstract

Ferroelectric Transistors: Operating Principles, Materials, and Applications

A. Yu. Reznyukov, K. A. Fetisenkova, and A. E. Rogozhin p. 140 abstract

Electrical Characteristics of Ruthenium Tracks with a Cross-Sectional Area Less Than 1000 nm²

O. G. Glaz, and A. E. Rogozhin p. 156 abstract

Effect of Boundary Roughness on the Variability of the VAC of Silicon Field-Effect GAA Nanotransistors

N. V. Masalskii p. 169 abstract

Measuring the Adhesion Energy between MEMS Structures Using an Adhered Cantilever

I. V. Uvarov, O. V. Morozov, A. V. Postnikov, and V. B. Svetovoy p. 177 abstract

Loss Analysis of T-Type Three-Level Inverter Based on SiC/GaN Device

Chunhua Chai, Chuanbin Huang, Mengyuan Zhang, and Guoliang Yang p. 187 abstract

Impact of Self-Heating in Si/SiGe HBTs with Multi-Finger Emitters

Abdelaaziz Boulgheb, Maya Lakhdara, and Saida Latreche p. 200 abstract

Investigation of Deposition Rates in Bilayer Silicon Nitride Structures Using Ellipsometry and the Maxwell Garnett Model

Abdelaziz Beddiaf, Malika Medjaldi, Abderrahim Lanani, and Djemouai Djamai p. 208 abstract