Contents

Russian Microelectronics

Vol. 52, No. 2, 2023

SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits

Yu. A. Novikov and M. N. Filippov p. 35  abstract

Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators

A. V. Tsukanov and I. Yu. Kateev p. 43  abstract

Cross Sections of Scattering Processes in Electron-Beam Lithography

A. E. Rogozhin and F. A. Sidorov p. 57  abstract

Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures

A. G. Isaev, O. O. Permyakova and A. E. Rogozhin p. 74  abstract

Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture

A. M. Efremov, V. B. Betelin and K.-H. Kwon p. 99  abstract

Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide

E. A. Kerimov p. 107  abstract

Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device

Maryam Shaveisi and Peiman Aliparast p. 112  abstract

Design of Ternary Multiplier Using Pseudo NCNTFETs

S. V. Ratan Kumar, L. Koteswara Rao and M. Kiran Kumar p. 119  abstract