Contents
Russian Microelectronics

Vol. 30, No. 2, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Kamil A. Valiev is 70 Years Old p. 67

In Situ Diagnostics of Plasma Processes in Microelectronics: The Current Status
and Immediate Prospects. Part I.

A. A. Orlikovskii and K. V. Rudenko p. 69  abstract

Formation of Local Insulating Regions by Stain Mask Etching

V. V. Starkov, E. A. Starostina, V. T. Volkov, and A. F. Vyatkin p. 88  abstract

Promising CMOS ICs Based on Si/CaF₂/Si Epitaxial Layers

A. A. Altukhov and A. Yu. Mityagin p. 94  abstract

InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic
and Microelectronic Devices

V. N. Petrov, G. E. Tsyrlin, A. O. Golubok, N. I. Komyak, V. M. Ustinov,
N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg p. 99  abstract

GaAs Thermal Oxidation by Introducing CrO₃ into a Gaseous Oxidizer

I. Ya. Mittova, V. V. Pukhova, O. A. Pinyaeva, and A. A. Emel’yanova p. 106  abstract

Deep Traps in Zn_xCd_1–&nbspxTe(Cl) Solid Solutions

A. A. Glebkin, T. S. Kitichenko, T. G. Kolesnikova, A. P. Korovin, and V. A. Chapnin p. 111  abstract

Digital Simulation of Fractal Measurements

P. A. Arutyunov p. 118  abstract

Gerentology of Silicon Integrated Circuits

M. I. Gorlov and A. V. Strogonov p. 125  abstract

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