Contents

Russian Microelectronics

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Vol. 47, No. 2, 2018

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

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Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum Dot

A. V. Tsukanov and I. Yu. Kateev p. 83  abstract

Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma

D. B. Murin and A. V. Dunaev p. 95  abstract

Field Emission Properties of Nanostructured Silicon Cathode Arrays

R. K. Yafarov, S. Yu. Suzdaltsev and V. Ya. Shanygin p. 104  abstract

Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal Particles

T. A. Bednaya and S. P. Konovalenko p. 112  abstract

Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia

A. I. Abdulagatov, Sh. M. Ramazanov, R. S. Dallaev, E. K. Murliev, D. K. Palchaev, M. Kh. Rabadanov and I. M. Abdulagatov p. 118  abstract

Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height

E. A. Kerimov, N. F. Kazymov and S. N. Musaeva p. 131  abstract

Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer

A. N. Aleshin, N. V. Zenchenko, D. S. Ponomarev and O. A. Ruban p. 137  abstract

The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory

Yu. V. Katunin and V. Ya. Stenin p. 142  abstract

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