Contents
Russian Microelectronics

Vol. 43, No. 2, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Evaluation of Multibit Upsets in Integrated Circuits under Heavy Charged Particles

A. I. Chumakov p. 91  abstract

Effect of Topological Placement of Memory Cells in Memory Chips
on Multiplicity of Cell Upsets from Heavy Charged Particles

A. B. Boruzdina, N. G. Grigor’ev, and A. V. Ulanova p. 96  abstract

Limitations and Prospects of Using the Two-Phase CMOS Logics
in Upset-Immune sub-100-nm VLSIs

V. Ya. Stenin p. 102  abstract

Modeling the Characteristics of Trigger Elements of Two-Phase CMOS Logic,
Taking into Account the Charge Sharing Effect under Exposure
to Single Nuclear Particles

Yu. V. Katunin, V. Ya. Stenin, and P. V. Stepanov p. 112  abstract

Laser Imitation Simulation behind the Diffraction Limit

P. K. Skorobogatov p. 125  abstract

Selection of Optimal Parameters of Laser Radiation for Simulating Ionization Effects
in Silicon Bulk-Technology Microcircuits

A. Yu. Nikiforov, P. K. Skorobogatov, A. N. Egorov, and D. V. Gromov p. 133  abstract

Transient Radiation Effects in Microwave Monolithic Integrated Circuits Based
on Heterostructure Field-Effect Transistors: Experiment and Model

V. V. Elesin p. 139  abstract

Application of Probabilistic and Fuzzy Models to the Simulation
of Radiation Failures of LSI Circuits

V. M. Barbashov, N. S. Trushkin, and K. A. Epifantsev p. 148  abstract

The Hydrogenic–Electron Model of Accumulation of Surface States
on the Oxide-Semiconductor Interface under the Effects of Ionizing Radiation

A. V. Sogoyan, S. V. Cherepko, and V. S. Pershenkov p.162 abstract

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