Contents
Russian Microelectronics
Vol. 42, No. 2, 2013
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.
Industrial Prospects of Pb1
xSnxTe:In with x > 0.3 Solid Solutions for Photodetectors
with Extended Sensitivity Spectral Range
A. N. Akimov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Pashchin,
V. N. Sherstyakova, and V. N. Shumsky p. 59 abstract
Effect of the Material of Injecting Contacts on the CVCs of Pb1
xSnxTe:In Films
A. N. Akimov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Pashchin,
V. N. Sherstyakova, and V. N. Shumsky p. 63 abstract
Investigation of Electrical Characteristics of Memory Cells Based on Self-Forming Conducting
Nanostructures in a Form of the TiNSiO2W Open Sandwich Structure
V. M. Mordvintsev and S. E. Kudryavtsev p. 68 abstract
Homogeneous Deposition of Nickel in Pores of the Ordered Thin Aluminum Oxide
A. I. Vorobeva, E. A. Utkina, and O. M. Komar p. 79 abstract
Complex Investigations of Effects of Charging a Polymer Resist (PMMA) during Electron Lithography
E. I. Rau, E. N. Evstafeva, S. I. Zaitsev, M. A. Knyazev, A. A. Svintsov, and A. A. Tatarintsev p. 89 abstract
Measurement of the Native Oxide Thickness on a Reference Relief Pitch Structure on
a Single-Crystal Silicon Substrate
V. P. Gavrilenko, A. A. Kuzin, A. Yu. Kuzin, A. A. Kuzmin, V. B. Mityukhlyaev,
A. V. Rakov, P. A. Todua, and M. N. Fillipov p. 99 abstract
A Model of a Metallic Quantum Nanotransistor with a Coulomb-Blockage Gate
in Magic Au55 and Ag55 Nanocrystals with Speed of 1011 Hz
V. A. Zhukov and V. G. Maslov p. 102 abstract
A Circuit Implementation of a Single-bit CMOS Adder
D. V. Morozov and M. M. Pilipko p. 113 abstract
A Multichannel ASIC for the Tracking System of the CBM Experiment
E. V. Atkin, A. G. Voronin, A. D. Kluev, I. A. Kudryashov, and V. V. Shumikhin p.119 abstract
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