Contents
Russian Microelectronics

Vol. 41, No. 2, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Peculiarities of Three-Dimensional Simulation of SOI MOS Transistors with an Indirect Gate

A. A. Glushko and V. A. Shakhnov p. 71  abstract

Fabrication of Magnetic Micro- and Nanostructures by Scanning Probe Lithography

A. A. Bukharaev, D. A. Bizyaev, N. I. Nurgazizov, and T. F. Khanipov p. 78  abstract

Influence of Radiation Defects on Diffusion of Arsenic and Antimony in Implanted Silicon

M. Jadan, A. R. Chelyadinskii, and V. Yu. Yavid p. 85  abstract

NV-Centers in Diamond. Part I. General Information, Fabrication Technology,
and the Structure of the Spectrum

A. V. Tsukanov p. 91  abstract

Microelectromechanical Converters

V. P. Dragunov and D. I. Ostertak p. 107  abstract

I–V Characteristics and the Spectrum Width during Electron Tunneling through Nanosandwiches
W–WO₂–()–Al₂O₃–Al and Nd–Nd₂O₃–()–Nd₂O₃–Nd.
Part I: Quantum-Chemical Calculation of Energies of Orbitals for Anions of Nanoclusters Au₅₅ and Au₁₄₇

V. A. Zhukov and V. G. Maslov p. 122  abstract

Single-Event-Upset Susceptibility Simulation of Sub-1-m CMOS Dual-Path Inverters

S. I. Ol’chev and V. Ya. Stenin p. 132  abstract

Errata

Erratum: “Dynamic Reconfiguration of the FPGA with the Use of Compressed Bit Streams”
[Russian Microelectronics, 40 (7), 502 (2011)]

V. A. Shaltyrev, K. A. Shaltyrev, and I. I. Shagurin p.143

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