Contents
Russian Microelectronics

Vol. 39, No. 2, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Foreword to the Special Issue on Radiation-Hardness Evaluation
and Prediction in Microelectronics p. 73

Radiation-Effect Modeling
and Simulation in Silicon Microelectronics

Single-Event-Effect Prediction for ICs in a Space Environment

A. I. Chumakov, A. L. Vasil’ev, A. A. Kozlov, D. O. Kol’tsov, A. V. Krinitskii,
A. A. Pechenkin, A. S. Tararaksin, and A. V. Yanenko p. 74  abstract

Features of Design of Submicron CMOS of Static RAMs with an Increased Failure Resistance
to the Effect of High-Energy Particles

V. Ya. Stenin and I. G. Cherkasov p. 79  abstract

Conversion Model of Enhanced Low-Dose-Rate Sensitivity for Bipolar ICs

V. S. Pershenkov, D. V. Savchenkov, A. S. Bakerenkov, and V. N. Ulimov p. 91  abstract

Methods of Construction of the Criterial Membership Function for the Prediction
of Functional Failures of Large-Scale Integrated Circuits under the Effect of Radiative
and Electromagnetic Radiations

V. M. Barbashov p. 100  abstract

Radiation-Induced Breakdown of a Nonuniformly Doped PN Junction

A. S. Puzanov and S. V. Obolensky p. 113  abstract

Ionizing-Radiation Effects on Advanced MMICs

The Effect of Ionizing Radiation on the Characteristics of SiliconGermanium Microwave Integrated Circuits

V. V. Elesin, G. V. Chukov, D. V. Gromov, V. V. Repin, and V. A. Vavilov p. 122  abstract

Design of Passive Elements for Monolithic Silicon–Germanium Microwave ICs Tolerant
to Ionizing Radiation

V. V. Elesin, G. N. Nazarova, and N. A. Usachev p. 134  abstract

Information for authors p.142

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.