Contents
Russian Microelectronics

Vol. 29, No. 2, 2000

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

A Model and Properties of a Thermodynamically Reversible Logic Gate

K. A. Valiev and V. I. Starosel’skii p. 77  abstract

A Symmetric Bipolar Structure

V. V. Rakitin p. 91  abstract

The Investigation into Charge Degradation of MIS Structures under Strong Electric Field
by a Method of Controlled Current Load

V. V. Andreev, V. G. Baryshev, G. G. Bondarenko, A. A. Stolyarov, and V. A. Shakhnov p. 97  abstract

Charge-Coupled Devices with Compensated Charge Transfer

V. A. Arutyunov and O. V. Sorokin p. 104  abstract

The Effect of Temperature Gradient on Silicon Oxidation

V. I. Rudakov and B. V. Mochalov p. 106  abstract

Investigation of Ti–Ge/GaAs Schottky Barrier Contacts

A. P. Bibilashvili, A. B. Gerasimov, Z. D. Samadashvili, and L. G. Chopozov p. 113  abstract

Conditions for Plasma Anodizing of Gallium Arsenide and Their Influence
on Native Oxide Properties

A. P. Bibilashvili, M. T. Vepkhvadze, and A. B. Gerasimov p. 117  abstract

Turn-on Transients in a BISPIN Device

A. P. Lysenko p. 125  abstract

Virtual Scanning: A Method for Testing One Class of Self-Organizing Cellular Automata

M. M. Tatur and R. Kh. Sadykhov p. 131  abstract

Thin-Film Multilayer Magnetic Sensors Based on the Anisotropic Magnetoresistive Effect

S. I. Kasatkin, A. M. Murav’ev, N. P. Vasil’eva, V. V. Lopatin, F. F. Popadinets, and A. V. Svatkov p. 137  abstract

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