Contents
Russian Microelectronics

Vol. 38, No. 1, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Introduction to the Cycle of Articles Devoted to Methods and Means of Evaluation and Prediction
of Radiation Stability of Submicron Articles of Microelectronics p. 1

Radiation-Effect Modeling and Analysis in Microelectronics Technologies

Experimental Studies of the Adequacy of Laser Simulations of Dose Rate Effects
in Integrated Circuits and Semiconductor Devices

A. Yu. Nikiforov, P. K. Skorobogatov, A. I. Chumakov, A. V. Kirgizova, A. G. Petrov, P. P. Kutsko,
A. V. Kuzmin, A. A. Borisov, V. A. Telets, V. T. Punin, and V. S. Figurov p. 2  abstract

Calculation of Surface Recombination Current in Bipolar Microelectronic Structures Subjected
to Ionizing Radiation

V. S. Pershenkov, D. V. Savchenkov, A. S. Bakerenkov and A. S. Egorov p. 17  abstract

Functional–Logical Simulation of Quality of Functioning Integrated Circuits Under the Effect
of Radiation and Electromagnetic Field

V. M. Barbashov and N. S. Trushkin p. 30  abstract

Prospects for Using Submicron CMOS VLSI in Fault-Tolerant Equipment Operating Under Exposure
to Atmospheric Neutrons

V. B. Betelin, S. V. Baranov, S. G. Bobkov, A. A. Krasnyuk, P. N. Osipenko, V. Ya. Stenin,
I. G. Cherkasov, A. I. Chumakov, and A. V. Yanenko p. 43  abstract

Operability Analysis of Submicron CMOS-Based VLSI RAMs Operated under Extreme Thermal
Conditions

A. A. Krasnyuk, V. Ya. Stenin, I. G. Cherkasov, and A. V. Yakovlev p. 48  abstract

Specific Features of Radiation-Stimulated Breakdown of a Nonuniformly Doped p–n Junction

A. S. Puzanov and S. V. Obolensky p. 58  abstract

Information for Authors p. 69

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