Contents
Russian Microelectronics

Vol. 26, No. 1, 1997

Simultaneous English language translation of the journal is available from / Interperiodica Publishing (Russia).
Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 1063-7397.

A Memory Device Based on an MIM Nanodiode with a Carboniferous Active Medium

K. A. Valiev, S. E. Kudryavtsev, V. L. Levin, V. M. Mordvintsev, and V. L. Savasin p. 1  abstract

A New Hybrid Focal-Plane Array for an IR Range

V. V. Osipov, V. P. Ponomarenko, and A. Yu. Selyakov p. 8  abstract

Digital-Filter Synthesis from Signal-Flow Graphs

P. A. Arutyunov and K. S. Afanas’ev p. 16  abstract

The Prediction of the Radiation-stimulated Failure Rate for Integrated Circuits

I. I. Katerinich and V. D. Popov p. 19  abstract

Space--Time Transfer Functions of Photodetector Arrays

V. P. Fedosov p. 22  abstract

Numerical Simulation of Resist-Silylation Kinetics

N. N. Simakov and A. N. Simakov p. 26  abstract

Semianalytical Model of a MOS Transistor with an Internal Ion-implanted Channel

E. N. Bormontov, V. P. Lezhenin, and I. V. Sai p. 31  abstract

On the Inclusion–Exclusion Method as a Basic Algorithm for Synthesis of Testable Microcircuits

I. P. Kobyak p. 35  abstract

The Magnetoresistance of Permalloy Nanobridges

A. Yu. Kasumov, V. I. Levashov, V. N. Matveev, V. A. Berezin, and V. A. Tulin p. 41  abstract

Synthesis of Testable Combinational Circuits Based on Dual-Threshold Elements

M. M. Tatur p. 44 abstract

Control of the Effective Barrier Height in Al / n-GaAs Epitaxial Structures Fabricated
in a Single MOCVD Process

V. I. Shashkin, A. V. Murel’, Yu. N. Drozdov, V. M. Danil’tsev, and O. I. Khrykin p. 49  abstract

The Effect of Heat Treatment on the Properties of Multicomponent Passivating Coatings

P. B. Parchinskii, S. I. Vlasov, A. A. Nasirov, and T. P. Adilov p. 53  abstract

Pulsed-Laser-Induced Structural and Compositional Transformations of a-Ge / SiO₂ / Si(111)

E. V. Monakhov, O. I. Lebedev, A. G. Vasil’ev, K. K. Burdel’,
N. A. Kiselev, A. A. Orlikovskii, and N. G. Chechenin p. 55  abstract

Silicon Dioxide Formation Mechanisms Depending on the Impurity Concentration

A. S. Safarov and M. T. Normuradov p. 61  abstract

Kinetic Features of Silicon Dioxide Formation

A. S. Safarov p. 63  abstract

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