Contents
Russian Microelectronics

Vol. 37, No. 1, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Foreword to the Special Issue on Ionizing-Radiation Effects in Microelectronics p. 1

Radiation-Effect Modeling and Simulation

Evaluating the Effect of Photogeneration Nonuniformity on the Accuracy
of Laser Simulation of the Transient Radiation Response in Semiconductor Devices and Circuits

A. Y. Nikiforov and P. K. Skorobogatov p. 2  abstract

Evaluating the Effect of Temperature on the Accuracy of Laser Simulation
of the Transient Radiation Response in Semiconductor Devices and Circuits

A. Y. Nikiforov and P. K. Skorobogatov p. 15  abstract

Simulating the Response of SOS CMOS Building Blocks to Pulsed Ionizing Irradiation

A. V. Kirgizova, P. K. Skorobogatov, A. Y. Nikiforov, L. N. Kessarinskii,
G. G. Davydov, and A. G. Petrov p. 25  abstract

Estimating IC Susceptibility to Single-Event Latchup

A. I. Chumakov, A. A. Pechenkin, A. N. Egorov, O. B. Mavritsky, S. V. Baranov,
A. L. Vasil’ev, and A. V. Yanenko p. 41  abstract

Simulating Single-Event Effects Associated with High-Energy Neutrons for Different
VLSI Technologies

S. V. Baranov, B. V. Vaselegin, P. N. Osipenko, A. I. Chumakov, and A. V. Yanenko p. 47  abstract

Current-Feedback Operational Amplifier: Some Features of Its Transient Radiation Response

T. M. Agakhanyan p. 55  abstract

Hardness Assurance: Methods and Results

Method for Online Nondestructive Hardness Assurance for CMOS LSI Circuits Realized
in SOS Technology

G. G. Davydov, A. V. Sogoyan, A. Y. Nikiforov, A. V. Kirgizova, A. G. Petrov,
A. Y. Sedakov, and I. B. Yashanin p. 62  abstract

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