Contents
Russian Microelectronics

Vol. 33, No. 1, 2004

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Process Technologies

Evolution of the Co–N/Ti/Si System in Magnetron Sputtering
of Co onto a Heated Ti/Si(100) Substrate

A. G. Vasiliev, A. L. Vasiliev, R. A. Zakharov,
A. A. Orlikovsky, I. A. Horin, and M. Eindou p. 1  abstract

Making Al Metallization Patterns

V. K. Smolin p. 7  abstract

Plasma-Assisted Diffusion Doping of Porous-Silicon Films

A. A. Kovalevskii, V. V. Glukhmanchuk, M. V. Tarasikov, and V. M. Sorokin p. 13  abstract

Technological Methods for Improving IC Reliability
in Mass Production

M. I. Gorlov, A. V. Andreev, L. P. Anufriev, and V. A. Emel’yanov p. 18  abstract

Epitaxy

A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures
by X-ray Diffraction and Total Reflection

A. A. Zaitsev, V. G. Mokerov, E. M. Pashaev, A. G. Sutyrin, and S. N. Yakunin p. 27  abstract

Thin Films

Photoelectrochemical Oxidation and Erosion of ZnO in Water

A. N. Gruzintsev, V. T. Volkov, and E. E. Yakimov p. 33  abstract

Materials

Nonlinear Recombination Waves in Zn-Doped Si
at Fully Developed Instability

B. V. Kornilov, G. B. Mikhailov, and V. V. Privezentsev p. 40  abstract

Circuits

Computer Evaluation of a Method for Combinational-Circuit Synthesis in FPGAs

S. V. Shalagin p. 46  abstract

Reducing Absorbed Dose by Optimizing Chip Dimensions

V. K. Kislelev and N. D. Latysheva p. 55  abstract

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