Contents
Russian Microelectronics
Vol. 32, No. 1, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Micro- and Nanoscale Devices
SOI-MOSFET Threshold-Voltage Characteristics
S. M. Zakharov p. 1 abstract
Self-aligned Technology Applied to Planar Power MOSFETs
M. A. Korolev, A. V. Shvets, and R. D. Tikhonov p. 11 abstract
MBE
MBE-Grown GaAs Films on GaAs(111)A Substrates
Misoriented toward []
G. B. Galiev p. 14 abstract
Process Modeling
Modeling Molecular-Ion Implantation into Solids
A. V. Chernyaev p. 21 abstract
Methods for the Prediction of Total-Dose Effects on Modern Integrated
Semiconductor Devices in Space: A Review
V. V. Belyakov, V. S. Pershenkov, G. I. Zebrev, A. V. Sogoyan,
A. I. Chumakov, A. Y. Nikiforov, and P. K. Skorobogatov p. 25 abstract
Statistical Simulation for Process Design
and Optimization in IC Manufacture
A. A. Kouleshoff, V. S. Malyshev, V. V. Nelayev, and V. R. Stempitsky p. 39 abstract
Statistical Yield Modeling for IC Manufacture:
Hierarchical Fault Distributions
Yu. I. Bogdanov, N. A. Bogdanova, and V. L. Dshkhunyan p. 51 abstract
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