Contents
Russian Microelectronics

Vol. 32, No. 1, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Micro- and Nanoscale Devices

SOI-MOSFET Threshold-Voltage Characteristics

S. M. Zakharov p. 1  abstract

Self-aligned Technology Applied to Planar Power MOSFETs

M. A. Korolev, A. V. Shvets, and R. D. Tikhonov p. 11  abstract

MBE

MBE-Grown GaAs Films on GaAs(111)A Substrates
Misoriented toward []

G. B. Galiev p. 14  abstract

Process Modeling

Modeling Molecular-Ion Implantation into Solids

A. V. Chernyaev p. 21  abstract

Methods for the Prediction of Total-Dose Effects on Modern Integrated
Semiconductor Devices in Space: A Review

V. V. Belyakov, V. S. Pershenkov, G. I. Zebrev, A. V. Sogoyan,
A. I. Chumakov, A. Y. Nikiforov, and P. K. Skorobogatov p. 25  abstract

Statistical Simulation for Process Design
and Optimization in IC Manufacture

A. A. Kouleshoff, V. S. Malyshev, V. V. Nelayev, and V. R. Stempitsky p. 39  abstract

Statistical Yield Modeling for IC Manufacture:
Hierarchical Fault Distributions

Yu. I. Bogdanov, N. A. Bogdanova, and V. L. Dshkhunyan p. 51  abstract

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