Contents
Russian Microelectronics

Vol. 31, No. 1, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Microstructure Characterization

Characterization of a Quantum Well in an Si/Si_1–xGe_x/Si Heterostructure by X-ray Diffractometry

A. M. Afanas’ev, A. P. Boltaev, R. M. Imamov, E. Kh. Mukhamedzhanov,
M. M. Rzaev, and M. A. Chuev p. 1  abstract

Process Technologies

Contact TiSi₂ and Barrier TiN Layers for ULSI Multilevel Metallization

A. G. Vasiliev, A. A. Orlikovsky, V. V. Rodatis, and I. A. Horin p. 7  abstract

Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis
of Hexamethyl Disilazane with Nitrogen-Containing Additives

O. N. Mittov^†, N. I. Ponomareva, I. Ya. Mittova, and M. N. Bezryadin p. 13  abstract

Statistical Process Control in IC Manufacture

S. A. Strizhkov p. 21  abstract

Interaction of a Microwave and a Low-Pressure Plasma
under Electron Cyclotron Resonance

A. B. Petrin p. 27  abstract

Circuit Engineering

Adiabatic Logic Circuits: A Review

V. I. Starosel’skii p. 37  abstract

Synthesis Techniques for Masterslice Combinational Logic: A Computer-Aided Evaluation

P. N. Bibilo and V. G. Litskevich p. 59  abstract

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