Contents
Russian Microelectronics
Vol. 31, No. 1, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Microstructure Characterization
Characterization of a Quantum Well in an Si/Si1xGex/Si Heterostructure by X-ray Diffractometry
A. M. Afanasev, A. P. Boltaev, R. M. Imamov, E. Kh. Mukhamedzhanov,
M. M. Rzaev, and M. A. Chuev p. 1 abstract
Process Technologies
Contact TiSi2 and Barrier TiN Layers for ULSI Multilevel Metallization
A. G. Vasiliev, A. A. Orlikovsky, V. V. Rodatis, and I. A. Horin p. 7 abstract
Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis
of Hexamethyl Disilazane with Nitrogen-Containing Additives
O. N. Mittov, N. I. Ponomareva, I. Ya. Mittova, and M. N. Bezryadin p. 13 abstract
Statistical Process Control in IC Manufacture
S. A. Strizhkov p. 21 abstract
Interaction of a Microwave and a Low-Pressure Plasma
under Electron Cyclotron Resonance
A. B. Petrin p. 27 abstract
Circuit Engineering
Adiabatic Logic Circuits: A Review
V. I. Staroselskii p. 37 abstract
Synthesis Techniques for Masterslice Combinational Logic: A Computer-Aided Evaluation
P. N. Bibilo and V. G. Litskevich p. 59 abstract
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