Contents
Russian Microelectronics


Vol. 31, No. 1, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.


Microstructure Characterization

Characterization of a Quantum Well in an Si/Si1–xGex/Si Heterostructure by X-ray Diffractometry

A. M. Afanas’ev, A. P. Boltaev, R. M. Imamov, E. Kh. Mukhamedzhanov,
M. M. Rzaev, and M. A. Chuev
p. 1  abstract


Process Technologies

Contact TiSi2 and Barrier TiN Layers for ULSI Multilevel Metallization

A. G. Vasiliev, A. A. Orlikovsky, V. V. Rodatis, and I. A. Horin p. 7  abstract

Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis
of Hexamethyl Disilazane with Nitrogen-Containing Additives

O. N. Mittov, N. I. Ponomareva, I. Ya. Mittova, and M. N. Bezryadin p. 13  abstract

Statistical Process Control in IC Manufacture

S. A. Strizhkov p. 21  abstract

Interaction of a Microwave and a Low-Pressure Plasma
under Electron Cyclotron Resonance

A. B. Petrin p. 27  abstract


Circuit Engineering

Adiabatic Logic Circuits: A Review

V. I. Starosel’skii p. 37  abstract

Synthesis Techniques for Masterslice Combinational Logic: A Computer-Aided Evaluation

P. N. Bibilo and V. G. Litskevich p. 59  abstract


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