Contents

Russian Microelectronics

Vol. 55, No. 1, 2026

Parameters and Composition of Plasma in a Mixture of HBr + O2: Model Adjustment and Comparison with Experiment

M. V. Tsepkin, A. M. Efremov, V. B. Betelin, and K.-H. Kwon p. 1  abstract

Electronic-Structural Relationship between Properties and Charge Transport in 2D Multicomponent Semiconductors

S. N. Mustafaeva, S. M. Asadov, S. S. Huseyinova, and V. F. Lukichev p. 12  abstract

Tight-Binding Approximation for a Double-Quantum-Dot Charge Qubit in an Optically Controlled Photonic Molecular Structure

A. V. Tsukanov and I. Yu. Kateev p. 30  abstract

Current State of STT-MRAM Cell-Based MTJ with MgO Tunnel Barrier

K. K. Abgaryan, N. A. Sobolev, N. A. Calanda, A. G. Yudenkov, A. N. Petlitskii, D. A. Kiselev, and A. V. Petrov p. 43  abstract

Ion-Stimulated Surface Diffusion

A. V. Fadeev and Yu. N. Devyatko p. 66  abstract

Artificial Intelligence As a Driver of Modern Science: From Biomedicine to International Megascience Projects

D. D. Musin, E. V. Varlamova, M. A. Marchenkova, and A. V. Soldatov p. 74  abstract

Mitigation of Preparation, Transformation, and Measurement Errors of a Two-Qubit State in Mølmer–Sørensen Gate Tomography

I. A. Dmitriev, Yu. I. Bogdanov, B. I. Bantysh, K. B. Koksharov, and V. F. Lukichev p. 81  abstract

Anomalous Electroforming and Switching of Memristors Based on Open Sandwich TiN–SiO2–Mo Structures

V. M. Mordvintsev and E. S. Gorlachev p. 89  abstract

Circular Dichroism in Chiral Metamaterials Based on Nanostructured Cobalt Films

O. S. Trushin, I. S. Fattakhov, D. R. Titov, A. A. Popov, L. A. Mazaletskiy, A. S. Fedorov, and M. V. Logunov p. 99  abstract

Modeling of Nonvolatile Memory Elements of ReRAM, FeRAM, and MRAM Using an Interval Approach

K. K. Abgaryan, A. A. Zhuravlev, A. Yu. Morozov, and D. L. Reviznikov p. 106  abstract

Multiscale Modeling of Nonvolatile Memory Elements (FeRAM)

A. A. Zhuravlev, K. K. Abgaryan, A. G. Ital’yantsev, and D. L. Reviznikov p. 114  abstract

Molecular Dynamics Simulation of Sputtering of Monocrystalline Silicon: Optimization of Thermostating Parameters

A. A. Nazarov, P. A. Yunin, M. S. Mikhailenko, and A. E. Pestov p. 123  abstract

Modeling and Optimization of Linearity in AlGaN/GaN Tri-Gate Fin-HEMTs Using Fin Configurations and Modulated Barrier Doping for Higher fT and fmax Using Small-Signal Analysis for RF Power Electronics Applications

Lakhmikanta Mishra, Kumud Ranjan, and Manasa Ranjan Jena p. 128  abstract

Quantum-Resistant Microelectronic Cryptography for Securing Vehicular Networks

A. J. Bhuvaneshwari, P. Kaythry, Rahul Ramu, Nivetha Elango, and Sai Eshwar p. 143  abstract

Clocking for Nanocomputing: A Quantum-Dot Cellular Automata Perspective

Angshuman Khan, Rohit Kumar Shaw, Soumya Sen, Rupayan Das, Santanu Basak, and Uttam Narendra Thakur p. 155  abstract

Design of Microstrip Parallel Coupled Band Pass Filter for ISM Band

Prtiam Nikam, Shahadev Hake, Jayendra Kumar, Ashish Patil, Akshay Bhosale, and Shridhar Mathad p. 161  abstract

Design and Simulation of Two-Stage Cascaded Low Noise Amplifier with Microstrip at 1.4 GHz, with a Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction

Abdelkrim Belmecheri and Mustapha Djebari p. 166  abstract

Structure, Optical and a Novel Approach to Low-Temperature Gas Sensing Using (SnO2)1–x(TiO2:Bi2O3)x Thin Films for NO2 Detection

Ahmad A. Hasan and Bushra A. Hasan p. 175  abstract

Effects on Internal Stress in Chip Array Resistors during Thermal Cycle Tests

Jin-A Kang, Jong-Su Ma, Il-Ryong Bong, Nam-Chol Yu, and Myong-Chol Kang p. 191  abstract

Simulation-Driven Analysis of Single-Event Effects in SiC Power MOSFETs

Ramya Mohan, Nagarajan Krishnan Kothalam, Binowesley Ramakrishnan, Anandhi Ramachandran, Anandh Velmurugan, Abishek Arun Kumar C, and Parameshwaran Rajendiran p. 196  abstract

Nanosized Fault-Tolerant Demultiplexer Design in Quantum-Dot Cellular Automata Nanotechnology

Nandan Vaid, Vijay Kumar Sharma, Prashant Kumar, and Sudakar Singh Chauhan p. 206  abstract

Design and Optimization of a Sparsified Kookaburra Quaternion Edge Attention Graph Network-Assisted Stub-Loaded Dual Band Four-Port MIMO Antenna for RF Energy Harvesting Applications

Kollabathula Suresh Kumar and Manapuram Ramesh Patnaik p. 215  abstract

Retraction Note

Retraction Note: Impact of Various Core Materials on the Behavior of Through-Silicon via (TSV) Inductor in a DC/DC Converter

Katepogu Rajkumar, J. Shena Latha, Bujjibabu Nannepaga, and G. Umamaheswara Reddy p. 237  abstract