Contents

Russian Microelectronics

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Vol. 52, No. 1, 2023

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Controlling Silicon Etching Parameters in RF CHF₃ Plasma by Optical Emission Spectroscopy

D. B. Murin, I. A. Chesnokov, S. A. Pivovarenok and A. M. Efremov p. 1  abstract

Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect

E. V. Zavitaev, O. V. Rusakov and E. P. Chukhleb p. 9  abstract

Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe₂

M. M. Asadov, S. N. Mustafaeva, S. S. Guseinova and V. F. Lukichev p. 21  abstract

Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact

E. A. Kerimov p. 32  abstract

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