Contents

Russian Microelectronics

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Vol. 48, No. 1, 2019

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Atomic Layer Deposition of Y₂O₃ Using Tris(butylcyclopentadienyl)yttrium and Water

A. I. Abdulagatov, R. R. Amashaev, Kr. N. Ashurbekova, Sh. M. Ramazanov, D. K. Palchaev, A. M. Maksumova, M. Kh. Rabadanov and I. M. Abdulagatov p. 1  abstract

Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching

S. V. Derevyashkin, E. A. Soboleva, V. V. Shelkovnikov, A. I. Malyshev and V. P. Korolkov p. 13  abstract

The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs

K. L. Enisherlova, Yu. V. Kolkovskii, E. A. Bobrova, E. M. Temper and S. A. Kapilin p. 28  abstract

Identification and Excitation Mechanisms of the Lines and Bands of Boron-Containing Components in the Optical Emission Spectra of Low-Temperature BF₃/Ar Plasmas

V. P. Kudrya p. 37  abstract

Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers

V. A. Paporkov and A. V. Prokaznikov p. 43  abstract

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