Vol. 47, No. 1, 2018

Russian Microelectronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm

K. V. Rudenko, A. V. Myakon’kikh, A. E. Rogozhin, O. P. Gushchin and V. A. Gvozdev p. 1 abstract

Simulating the Effects of Internal Mechanical Stresses on the Decomposition Kinetics of a Supersaturated Oxygen Solution in Silicon

T. M. Makhviladze and M. E. Sarychev p. 11 abstract

Simulation of Single Event Effects in STG DICE Memory Cells

Yu. V. Katunin and V. Ya. Stenin p. 20 abstract

Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge

D. V. Sitanov and S. A. Pivovarenok p. 34 abstract

Studying the Thermodynamic Characteristics of Anodic Alumina

A. I. Vorob’eva, D. L. Shimanovich and O. A. Sycheva p. 40 abstract

Basic Techniques of Increasing Resolution of Photopolymerizable Compositions

V. M. Treushnikov, S. P. Molodnyakov and V. V. Semenov p. 50 abstract

A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption

P. N. Bibilo, N. A. Avdeev, S. N. Kardash, N. A. Kirienko, Yu. Yu. Lankevich, I. P. Loginova, V. I. Romanov, D. I. Cheremisinov and L. D. Cheremisinova p. 65 abstract

Contents

Russian Microelectronics