Contents
Russian Microelectronics

Vol. 43, No. 1, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Formation of the Nickel–Platinum Alloy Silicide Schottky Barriers

V. A. Solodukha, A. S. Turtsevich, Ya. A. Solov’ev, F. F. Komarov,
O. V. Mil’chanin, T. B. Kovaleva, and S. V. Gaponenko p. 1  abstract

Investigation of the GaAs Surface after Etching in the Plasma of Mixtures HCl/Ar,
HCl/Cl₂, and HCl/H₂ by Atomic-Force Microscopy

A. V. Dunaev p. 9  abstract

A Distribution of Ga⁺ Ions in a Silicon Substrate for Nano-Dimensional Masking

I. I. Bobrinetskii, V. K. Nevolin, K. A. Tsarik, and A. A. Chudinov p. 15  abstract

Assembly of 3D-Wares with the Use of Wire Leadouts

V. V. Zenin, A. A. Stoyanov, S. V. Petrov, and S. Yu. Chistyakov p. 21  abstract

Effect of HF Discharge Structure on Etch Nonuniformity in Plasma–Chemical Reactor

Yu. N. Grigor’ev and A. G. Gorobchuk p. 34  abstract

Formation and Dielectric Properties of Nanolayers of Tantalum and Aluminum Oxides

Yu. K. Ezhovskii p. 42  abstract

Simulation of Spatially-Heterogeneous Oxygen Precipitation in Silicon
with Allowance for Internal Mechanical Stresses

R. V. Goldshtein, T. M. Makhviladze, and M. E. Sarychev p. 49  abstract

A Semianalytical Model of a Nanowire-Based Field-Effect Transistor

A. N. Khomyakov and V. V. V’yurkov p. 57  abstract

A Modifying Algorithm of the Topological VLSI Layer by Dummy Filling Features
Based on Modeling the Chemical-Mechanical Planarization

A. V. Amirkhanov, A. A. Gladkykh, V. V. Makarchuk,
A. A. Stolyarov, and V. A. Shakhnov p. 72  abstract

Micro Systems Engineering and Digital Holographic Flash Memory

V. A. Zhukov p.80  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.