Contents
Russian Microelectronics

Vol. 42, No. 1, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

NV Centers in Diamond. Part III: Quantum Algorithms, Scaling, and Hybrid Systems

A. V. Tsukanov p. 1  abstract

Sensor Based on Silicon Microchannel Resistor

M. A. Parashchenko, N. V. Vandysheva, V. V. Kirienko, N. S. Filippov, and S. I. Romanov p. 16  abstract

Investigation of Electrical Properties of Organic Memristors Based on Thin Polyaniline–Graphene Films

T. S. Berzina, K. V. Gorshkov, V. V. Erokhin, V. K. Nevolin, and Yu. A. Chaplygin p. 27  abstract

Linearized Wave Model of the CMOS-Inverter Ring Oscillator

V. A. Lementuev and M. S. Sonin p. 33  abstract

Characteristics of Double-Gate SOI CMOS Nanotransistors for Promising Technologies
with a Low Power Consumption Level

N. V. Massal’skii p. 40  abstract

Extracting the Fitting Parameters for the Conversion Model of Enhanced Low Dose Rate Sensitivity
in Bipolar Devices

A. S. Bakerenkov, V. V. Belyakov, V. S. Pershenkov, A. A. Romanenko,
D. V. Savchenkov, and V. V. Shurenkov p. 48  abstract

Application Features of the Error Correction Coding in Sub-100-nm Memory
Microcircuits for Cosmic Systems

A. A. Krasnyuk and K. A. Petrov p.53  abstract

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