Contents
Russian Microelectronics

Vol. 41, No. 1, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Influence of Quantum Effects on Electron Transport in Molybdenum Nanocontacts

L. Fedichkin, A. Borisov, A. Konin, R. Petrukhnenko, M. Chernyshev, and V. Rubaev p. 1  abstract

Magnetization Oscillations in a Ferromagnet/Nonmagnetic Metal/Ferromagnet Nanostructure
under the Action of the Spin-Polarized Current

A. V. Kukharev, A. L. Danilyuk, and V. E. Borisenko p. 5  abstract

Influence of Optical Properties of the SOI Structure on the Wafer Temperature
during Rapid Thermal Annealing

V. I. Rudakov, V. V. Ovcharov, and V. P. Prigara p. 15  abstract

Interaction of Electromagnetic H-Wave with Thin Metal Film

A. V. Latyshev and A. A. Yushkanov p. 25  abstract

Diagnostics of Degradation Processes in the Metal– Semiconductor System

A. A. Skvortsov, A. M. Orlov, and S. M. Zuev p. 31  abstract

Probe Modification for Scanning-Probe Microscopy by the Focused Ion Beam Method

B. G. Konoplev, O. A. Ageev, V. A. Smirnov, A. S. Kolomiitsev, and N. I. Serbu p. 41  abstract

Optimization of Parameters of Double-Gate Sub-20 Nanometers SOI CMOS Transistors
with Architecture “without Overlapping”

N. V. Masalsky p. 51  abstract

Estimating Energy Consumption in Logical CMOS Circuits Based on Their Switching Activity

P. N. Bibilo and N. A. Kirienko p.59  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.