Contents
Russian Microelectronics

Vol. 39, No. 1, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Technological Processes
in Micro- and Nanoelectronics

Effect of Surface Roughness on the Temperature of a Silicon Wafer Heated by Incoherent Radiation

V. I. Rudakov, V. V. Ovcharov, and V. P. Prigara p. 1  abstract

A New Technology for Manufacturing the Dielectric Isolation of Elements
of Microelectronic Devices by Oxidizing Grooves in Single-Crystal Silicon

Yu. P. Snitovskii and M. G. Krasikov p. 12  abstract

Diagnosing Reliability of Integrated Circuits Using Noises and the ESD Effect

M. I. Gorlov, D. Yu. Smirnov, and R. M. Tikhonov p. 19  abstract

Thin Films

Low-Temperature Pulsed CVD of Ruthenium Thin Films for Micro- and Nanoelectronic Applications,
Part 1: Equipment and Methodology

V. Yu. Vasilyev p. 26  abstract

Semiconductor Devices

Determination of the Diffusion Length of Charge Minority Carriers
Using Digital Oscillography of Surface Photovoltage

V. N. Podshivalov p. 34  abstract

Offset Voltage of an Integrated Magnetotransistor Sensor

R. D. Tikhonov p. 42  abstract

Circuit Analysis and Synthesis

Low-Voltage Arithmetic Units Based on Fully Depleted SOI CMOS Nanotransistors

N. V. Masal’skii p. 54  abstract

Modeling and Simulation

Intersubband Optical Transitions in InAs/GaSb Quantum Wells

I. A. Semenikhin, A. A. Zakharova, and K. A. Chao p.63  abstract

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