Contents
Russian Microelectronics

Vol. 29, No. 1, 2000

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Delta-Doped MESFETs on GaAs Grown by Metallorganic Chemical Vapor Deposition

V. L. Gurtovoi, V. V. Valyaev, S. Yu. Shapoval, S. V. Morozov,
S. V. Dubonos, A. A. Asryan, and A. N. Pustovit p. 1  abstract

Surface Cleaning with an Atomic Hydrogen Flow in Fabricating Ohmic
and Barrier Contacts to GaAs and Al_xGa_1 – xAs

A. S. Vishnyakov, V. A. Kagadei, N. I. Kozhinova, D. I. Proskurovskii, and L. M. Romas’ p. 9  abstract

Atomic Force Microscopy for Designing Micro- and Nanoelectronic Devices. Part 2

P. A. Arutyunov and A. L. Tolstikhina p. 20  abstract

A Simple Model for Controlling the Roughness of Silicon Dioxide / Polysilicon
Interface during Oxidation

E. G. Sal’man and G. V. Perov p. 28  abstract

Charge States in the Si–SiO₂ Transition Region after Radiation and Thermal Field Treatments

E. D. Vasil’eva, M. N. Kolotov, M. V. Nakhimovich, and V. I. Sokolov p. 31  abstract

Fabrication of Submicron Structures by Anisotropically Etching Resists in
an Oxygen Plasma Produced by a Radio-Frequency Induction Discharge

I. I. Amirov and V. A. Fedorov p. 35  abstract

REE-Doped Insulating Films in MIM Structures

V. A. Sokol, M. M. Pinaeva, and E. A. Gurskaya p. 43  abstract

Physicomathematical Simulation of an Integrated MOS-Type Hall Element

V. V. Amelichev, A. I. Galushkov, Yu. N. Mirgorodskii, P. A. Tikhomirov,
Yu. A. Chaplygin, and S. V. Shubin p. 48  abstract

Mathematical Simulation of Ion-Beam Mixing Processes

Yu. F. Blinov and P.V. Serba p. 58  abstract

Pulse Amplifiers Based on Transimpedance Integrated Op Amps
with a Resistive Divider in a Feedback Loop

T. M. Agakhanyan p. 62  abstract

Synthesis of Three-Level Programmable Logic Arrays

P. N. Bibilo p. 69  abstract

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