TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation

K. O. Petrosyantsa, b, *, D. S. Silkina, D. A. Popova, Bo Lic, and Xu Zhangc

a National Research University Higher School of Economics, Moscow, Russia

b Institute for Design Problems in Microelectronics, Russian Academy of Sciences, Moscow, Russia

c Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Correspondence to: *e-mail:

Received 11 May, 2021

Abstract—The transition from planar MOSFET structures to 3D FinFET structures provides resistance to various types of radiation. However, the characteristics of irradiated devices created at different manufacturers differ significantly, and it is rather difficult to explain the dependence of the radiation resistance of FinFE-T structures on variations in their physical and topological parameters and electrical modes. We develop a radiation version of the TCAD model of a FinFET MOSFET on bulk silicon. Additional semiempirical radiation dependences specific for FinFET structures for the effective mobility of charge carriers and the concentration of traps in the volumes of SiO2 and HfO2 oxides and at the oxide–silicon interfaces are introduced in the basic model of a nanometer MOSFET. The model is implemented in the Sentaurus Synopsys TCAD environment. The model is validated on a test set of FinFET structures with a channel length of 60 to 7 nm without irradiation and in the range of gamma irradiation doses up to 1 Mrad. A comparison of the static current-voltage characteristics obtained by simulation with the experimental results showed an error not exceeding 15%.

Keywords: FinFET structure, ionizing radiation, TCAD modeling

DOI: 10.1134/S1063739722070083