Vol. 49, No. 1, 2023
Influence of Slow Dynamics Effects on the Elastic Relaxation Properties of Polycrystalline Metal Rods
p. S1 abstract
Stable Forms and Stationary Emission of the Ions of Tantalum Field Emitter During Exposure to an External Electric Field at High Temperatures
p. S5 abstract
Rotation of an Atomic-Molecular Particle Placed into the Linearly Polarized Light Field and Static Electric or Magnetic Fields
p. S8 abstract
Electrochemical Performance of LIB Anodes Based on Silicon Monoxide: The Effect of Disproportionation and Treatment in HF
p. S11 abstract
Stabilization of Low-Threshold Two-Plasmon Parametric Decay Instability with Oblique Microwave Incidence on the Plasma
p. S15 abstract
Magnetization of Needle Graphene Embedded in a Polystyrene Matrix
p. S19 abstract
Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes
p. S22 abstract
Development and Study of a Model of an Autonomous Energy Information Station of Free Space Optical Communication
p. S26 abstract
Electronic Spectroscopy of Graphene Obtained by Ultrasonic Dispersion
p. S31 abstract
The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data
p. S34 abstract
Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method
p. S38 abstract
Current–Voltage Characteristic of the Thermal Ion Emission of Na From the NaxAu Surface
p. S41 abstract
Photo-Receiving Device for Conversion of Energy and Data Transmitted Via Atmospheric Laser Channel
p. S44 abstract
Optimization of the Field Cathode High Voltage Training Based on Field Projector Data
p. S49 abstract
Cascade of Impedance Instabilities of the Structure Pd-Surface-Oxidized-InP
p. S53 abstract
Percolative Charge Transport on Electrified Surface of Polytetrafluoroethylene
p. S56 abstract
The Features of the Layers Growth in Stressed InAs/GaSb Superlattices
p. S60 abstract
Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters
p. S64 abstract
Replacing Tunnel Junctions in InP with Conduction Channels with GaP Crystallites
p. S68 abstract
Auger Transition Probabilities and Electron Emission Cross Sections for Vacancy Decay into the 2pπ-Orbital in the Ne+–Ne Quasimolecule
p. S71 abstract