Vol. 47, No. 5, 2021
α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal
p. 349 abstract
Substrates with Diamond Heat Sink for Epitaxial GaN Growth
p. 353 abstract
Formation of a Мultiscale Structure during Impact Loading of a Solid
p. 357 abstract
Application of the Scattering Matrix Method for Calculation of Impurity States in Semiconductor Structures
p. 360 abstract
The Synergistic Effect of a Hybrid Filler Based on Graphene Nanoplates and Multiwalled Nanotubes for Increasing the Thermal Conductivity of an Epoxy Composite
p. 364 abstract
Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents
p. 368 abstract
A Laser Monitor with Independent Lighting and Brightness Amplification for Imaging High-Temperature Combustion of Metal Nanopowders
p. 372 abstract
N-Shaped Voltage–Current Characteristics of Hybrid Organic Materials Based on Zinc Complexes
p. 377 abstract
Energy Distributions of Secondary Charged Particles Sputtered by Gas Cluster Ions
p. 381 abstract
Thermionic Emission from Indium Antimonide Quantum Dots
p. 385 abstract
A Hybrid Mid-IR Photodetector Based on Semiconductor Quantum Wells
p. 388 abstract
Spherical Aluminum Shells (Bubbles) with Nanodimensional Wall Thickness: a New Class of 2D Nanoobjects
p. 392 abstract
Controlling the Aerodynamic Drag of a Cylinder with Gas-Permeable Porous Inserts by Regulating Base Pressure
p. 396 abstract
The Effect of Vacancy Concentration on the Migration Rate of the Tilt Boundaries in Nickel: Molecular Dynamics Modeling
p. 399 abstract
Equilibrium Parameters of Bilayer Graphene Filled with Fullerene C60 Molecules
p. 403 abstract
Directional Radiation from GaAs quantum dots in AlGaAs nanowires
p. 405 abstract
Possibilities of Shield Protection of Space Objects from an Elongated Impactor at a Velocity of 7–11 km/s
p. 409 abstract
Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates
p. 413 abstract